Analysis of CMOS compatible Cu-based TM-pass optical polarizer

TK Ng, MZM Khan, A Al-Jabr… - IEEE Photonics …, 2012 - ieeexplore.ieee.org
A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-
oxide-semiconductor technology platform is proposed and analyzed using the 2-D method …

Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission

MZM Khan, TK Ng, CS Lee, P Bhattacharya… - Applied Physics …, 2013 - pubs.aip.org
We report on the demonstration of 50 nm (full-width at half-maximum) broadband stimulated
emission from a chirped AlGaInAs barrier thickness multi-stack InAs/InP quantum dash …

Investigation of chirped InAs/InGaAlAs/InP quantum dash lasers as broadband emitters

MZM Khan, TK Ng, CS Lee… - IEEE Journal of …, 2013 - ieeexplore.ieee.org
In this paper, we assessed the effect of additionally broadened quantum dash (Qdash)
optical transitions in the multi-stack dash-in-a-well laser structure at both, material and …

Frequency-dependent linewidth enhancement factor of optical injection-locked quantum dot/dash lasers

C Wang, ME Chaibi, H Huang, D Erasme, P Poole… - Optics …, 2015 - opg.optica.org
Combining theoretical and experimental studies show that optical injection strongly changes
the behavior of the linewidth enhancement factor (α_H-factor) and the FM-to-AM indices …

Spectral analysis of quantum-dash lasers: Effect of inhomogeneous broadening of the active-gain region

MZM Khan, TK Ng… - IEEE Journal of …, 2012 - ieeexplore.ieee.org
The effect of the active region inhomogeneity on the spectral characteristics of InAs/InP
quantum-dash (Qdash) lasers is examined theoretically by solving the coupled set of carrier …

Distinct lasing operation from chirped InAs/InP quantum-dash laser

MZM Khan, TK Ng, CS Lee, DH Anjum… - IEEE Photonics …, 2013 - ieeexplore.ieee.org
We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by
incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing …

Two-state lasing at room temperature in InAs/InP quantum dots

Y Xiong, X Zhang - Journal of Applied Physics, 2019 - pubs.aip.org
The two-state lasing conditions at room temperature in InAs/InP quantum dot (QD) lasers
under a continuous wave electrical bias current are studied. It is found that excited state (ES) …

Semiconductor quantum dash broadband emitters: modeling and experiments

MZM Khan - 2013 - repository.kaust.edu.sa
Broadband light emitters operation, which covers multiple wavelengths of the
electromagnetic spectrum, has been established as an indispensable element to the human …

Double quantum dot in a quantum dash: Optical properties

P Kaczmarkiewicz, P Machnikowski… - Journal of Applied Physics, 2013 - pubs.aip.org
We study the optical properties of highly elongated, highly flattened quantum dot structures,
also referred to as quantum dashes, characterized by the presence of two trapping centers …

Effect of optical waveguiding mechanism on the lasing action of chirped InAs/AlGaInAs/InP quantum dash lasers

MZM Khan, TK Ng, CS Lee… - Novel In-Plane …, 2013 - spiedigitallibrary.org
We report on the atypical emission dynamics of InAs/AlGaInAs/InP quantum dash (Qdash)
lasers employing varying AlGaInAs barrier thickness (multilayer-chirped structure). The …