Hysteresis in memristors produces conduction inductance and conduction capacitance effects

J Bisquert, JB Roldán, E Miranda - Physical Chemistry Chemical …, 2024 - pubs.rsc.org
Memristors are devices in which the conductance state can be alternately switched between
a high and a low value by means of a voltage scan. In general, systems involving a chemical …

Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory

C Gonzales, A Bou, A Guerrero… - The Journal of Physical …, 2024 - ACS Publications
With the increasing demands and complexity of the neuromorphic computing schemes
utilizing highly efficient analog resistive switching devices, understanding the apparent …

Coexistence of resistive capacitive and virtual inductive effects in memristive devices

S Yarragolla, T Hemke, J Trieschmann… - arXiv preprint arXiv …, 2024 - arxiv.org
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive)
effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or …

Nonlinear behavior of area dependent interface type resistive switching devices

S Yarragolla, T Hemke, F Jalled, T Gergs… - arXiv preprint arXiv …, 2024 - arxiv.org
Nonlinearity is a crucial characteristic for implementing hardware security primitives or
neuromorphic computing systems. The main feature of all memristive devices is this …

[PDF][PDF] Nonlinear behavior of memristive devices for hardware security primitives and neuromorphic computing systems

S Yarragolla, T Hemke, F Jalled, T Gergs… - arXiv preprint arXiv …, 2024 - researchgate.net
Nonlinearity is a crucial characteristic for implementing hardware security primitives or
neuromorphic computing systems. The main feature of all memristive devices is this …