β-Ga2O3, with excellent bandgap, breakdown field, and thermal stability properties, is
considered to be one of the most promising candidates for power devices including field …

Parallel-connected power device is an extensively applied solution in the industry to
increase the current rating of the converter system. However, due to the undesired printed …

The failure caused by cumulative fatigue damage due to cyclical thermal stress is the
dominant failure mode of power semiconductor devices, and it poses reliability concerns. In …

Silicon carbide (SiC) power devices have been extensively for high-power-density
application scenarios. To increase the current rating, SiC devices are usually connected in …

With the growth of electric vehicles (EVs), developing high-power density bidirectional on-
board chargers (OBCs) has become a research hotspot. The asymmetric CLLC is one of the …

Abstract β-Ga 2 O 3, with excellent bandgap, breakdown field, and thermal stability
properties, is considered to be one of the most promising candidates for power devices …

With the fabulous growth of the renewable energy industry, silicon carbide (SiC) metal-oxide-
semiconductor field-effect transistors (MOSFETs) are increasingly finding applications in …

The intrinsic parameter disparities between silicon carbide (SiC) metal oxide semiconductor
field effect transistors (MOSFETs) in the same phase leg can lead to variations in …

The safe operation and lifetime of the power module are heavily dependent on the
temperature distribution, making it imperative to optimize the thermal performance of the …

The parallel connection of silicon carbide (SiC)-mosfet modules can effectively increase the
rated current of modules, however, the related current imbalance issue will affect the …