Band gap versus composition and demonstration of Vegard's law for In1− xGaxAsyP1− y lattice matched to InP
RE Nahory, MA Pollack, WD Johnston… - Applied Physics …, 1978 - pubs.aip.org
Measurements of lattice parameters and compositions for Inl_xGaxAsyPI_y lattice matched
to InP demonstrate the validity of Vegard's law for this quaternary. The measured …
to InP demonstrate the validity of Vegard's law for this quaternary. The measured …
[图书][B] Semiconductor optical amplifiers
NK Dutta, Q Wang - 2013 - books.google.com
This invaluable book provides a comprehensive treatment of design and applications of
semiconductor optical amplifiers (SOA). SOA is an important component for optical …
semiconductor optical amplifiers (SOA). SOA is an important component for optical …
Composition dependence of the band gaps of In1−xGaxAs1−yPy quaternary solids lattice matched on InP substrates
K Nakajima, A Yamaguchi, K Akita… - Journal of Applied Physics, 1978 - pubs.aip.org
The In‐Ga‐As‐P quaternary phase diagram required for the growth of lattice‐matched In1− x
Ga x As1− y P y layers on InP substrates has been determined experimentally at 650° C …
Ga x As1− y P y layers on InP substrates has been determined experimentally at 650° C …
Thermodynamics of type A1− xBxC1− yDy III–V quaternary solid solutions
K Onabe - Journal of Physics and Chemistry of Solids, 1982 - Elsevier
An improved theory based on the pair approximation is given for the thermodynamic
properties of type A 1− x B x C 1− y D y III–V quaternary solid solutions. The theory takes into …
properties of type A 1− x B x C 1− y D y III–V quaternary solid solutions. The theory takes into …
Growth and characterization of InGaAsP lattice-matched to InP
PA Houston - Journal of Materials Science, 1981 - Springer
The development of InGaAsP lattice-matched to InP as a suitable material for a range of
electronic devices is reviewed. Currently accepted values of fundamental material …
electronic devices is reviewed. Currently accepted values of fundamental material …
Photoluminescent and electrical properties of InGaPAs mixed crystals liquid phase epitaxially grown on (100) GaAs
S Mukai - Journal of Applied Physics, 1983 - pubs.aip.org
In 1 _ x Gax PI _ y Asy is a mixed crystal of four binary compound semiconductors of zinc-
blende structure, InP, GaP, InAs, and GaAs. Since its first synthesis, 1 most investigation into …
blende structure, InP, GaP, InAs, and GaAs. Since its first synthesis, 1 most investigation into …
Bandgap energy of InGaAsP quaternary alloy
Y Yamazoe, T Nishino, Y Hamakawa… - Japanese Journal of …, 1980 - iopscience.iop.org
The bandgap energy of InGaAsP quaternary alloy lattice-matched to InP has been precisely
determined by electroreflectance (ER) measurements. The ER spectra show the typical low …
determined by electroreflectance (ER) measurements. The ER spectra show the typical low …
Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates
K Nakajima, T Kusunoki, K Akita… - Journal of The …, 1978 - iopscience.iop.org
The phase diagram of the In-Ga-As-P quaternary system has been determined
experimentally for several As isoconcentration sections at 600~ and 650~ The liquidus data …
experimentally for several As isoconcentration sections at 600~ and 650~ The liquidus data …
Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution …
M Feng, LW Cook, MM Tashima… - Journal of Electronic …, 1980 - Springer
Constant composition InGaAsP epitaxial layers can be grown on (100) InP substrates at a
constant temperature using the diffusion-limited step-cooling growth technique, and in …
constant temperature using the diffusion-limited step-cooling growth technique, and in …
Melt and solution growth of bulk single crystals of quaternary III–V alloys
KJ Bachmann, FA Thiel, H Schreiber Jr - Progress in Crystal Growth and …, 1979 - Elsevier
Due to limitations imposed by phase relations and by kinetic parameters, the growth of
single crystals of quaternary III–V alloys by melt and solution growth techniques is restricted …
single crystals of quaternary III–V alloys by melt and solution growth techniques is restricted …