Advances in silicon carbide science and technology at the micro-and nanoscales
Advances in siliconcarbide microfabrication and growth process optimization for
siliconcarbide nanostructures are ushering in new opportunities for microdevices capable of …
siliconcarbide nanostructures are ushering in new opportunities for microdevices capable of …
[HTML][HTML] Electrical discharge machining of semiconductor materials: A review
Abstract Semiconductor materials including Silicon (Si), Germanium (Ge), Gallium Arsenide
(GaAs), and Silicon Carbide (SiC) are difficult to machine due to their high brittleness and …
(GaAs), and Silicon Carbide (SiC) are difficult to machine due to their high brittleness and …
Ohmic contact formation mechanism of Ni on -type 4H–SiC
Ohmic contact formation mechanism of Ni on n-type 4H–SiC is proposed by comparing the
electrical properties with microstructural change. The ohmic behavior was observed at …
electrical properties with microstructural change. The ohmic behavior was observed at …
Semiconductor device and method for manufacturing same
O Kusumoto, M Kitabatake, K Takahashi… - US Patent …, 2009 - Google Patents
An accumulation-mode MISFET comprises: a high-resis tance SiC layer 102 epitaxially
grown on a SiC substrate 101; a well region 103; an accumulation channel layer 104 having …
grown on a SiC substrate 101; a well region 103; an accumulation channel layer 104 having …
[图书][B] Silicon Carbide: Materials, Processing & Devices
CF Zhe - 2003 - books.google.com
This book will provide useful information to material growers and evaluators, device design
and processing engineers as well as potential users of SiC technologies. This book will help …
and processing engineers as well as potential users of SiC technologies. This book will help …
[HTML][HTML] Formation mechanism, interface characteristics and the application of metal/SiC thin-film ohmic contact after high-temperature treatment
C Wu, X Fang, Q Kang, Z Fang, H Sun, D Zhang… - Journal of Materials …, 2023 - Elsevier
SiC, as a representative of the third generation semiconductors, is widely investigated in
power devices and sensors. However, ohmic contacts, an important component for signal …
power devices and sensors. However, ohmic contacts, an important component for signal …
Ohmic contacts on silicon carbide: The first monolayer and its electronic effect
Z Wang, S Tsukimoto, M Saito, K Ito, M Murakami… - Physical Review B …, 2009 - APS
We demonstrate that origin of the long-standing contact issue in silicon carbide devices can
be understood and technologically manipulated at the atomic level. Using advanced …
be understood and technologically manipulated at the atomic level. Using advanced …
Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC
Studying the temperature dependence of the electrical properties of Ohmic contacts formed
on ion-implanted SiC layers is fundamental to understand and to predict the behaviour of …
on ion-implanted SiC layers is fundamental to understand and to predict the behaviour of …
The thermal stability study and improvement of 4H-SiC ohmic contact
S Liu, Z He, L Zheng, B Liu, F Zhang, L Dong… - Applied Physics …, 2014 - pubs.aip.org
The thermal stability of the standard Ni/SiC and a TiW/Ni/SiC Ohmic contacts was
investigated and compared after being aged at 400 C in the N 2 atmosphere. The Ohmic …
investigated and compared after being aged at 400 C in the N 2 atmosphere. The Ohmic …
Thermal stability study of n-type and p-type ohmic contacts simultaneously formed on 4H-SiC
Y Zhang, T Guo, X Tang, J Yang, Y He… - Journal of Alloys and …, 2018 - Elsevier
Abstract In this paper, Pt/TaSi 2/Ni/Ti/Ni/SiC and Pt/Ti/SiC simultaneous ohmic contacts to n-
type and p-type 4H-SiC are studied. The thermal stability and electrical characteristics of the …
type and p-type 4H-SiC are studied. The thermal stability and electrical characteristics of the …