The uniformity of InP and GalnAs lattice matched to InP has been studied for three different
types of horizontal reactors. Employing the conventional approach, ie the susceptor is …

This paper describes the application of atmospheric pressure MOVPE to the growth of
several long wavelength opto-electronic components including lasers, detectors, field effect …

High purity InP epilayers have been grown by OMVPE with 77 K mobilities as high as
119000 cm 2 V-1 s-1 using TMIn specially purified via the diphos route. The effect of growth …

In ion‐implanted semiconductors, details of the defects involved and annealing mechanisms
which determine the final disorder structure are complicated and difficult to characterize. To …

The properties of InGaAs-InP single quantum wells have been studied by using the
photoluminescence technique. Samples were grown by atmospheric pressure metalorganic …

Metalorganic vapor-phase epitaxy of InyGa1− yAs from triethylgallium, trimethylindium and
tertiarybutylarsine was studied using on-line infrared spectroscopy to monitor the …

Zn and an unidentified acceptor species, labeled A 1, are the only residual acceptors that
have been observed in a wide variety of undoped high‐purity InP samples grown by …

Molecular stream epitaxy allows several molecular beam epitaxy (MBE) concepts to take
place in a metalorganic chemical vapor deposition reactor. In this technique, the growth of …

Shaped crystal growth refers to the growth of single crystals with a predetermined cross
sectional configuration designed for a specific application. The quest to develop such …

The organometallie vapor phase epitaxy (OMVPE) technique originated from early work of
Manasevit [1]. This technique, by which compound semiconductor epitaxial layers are grown …