Ultrathin layered films in new transistors architectures (FinFET and fully depleted SOI)
require damage-free plasma etching techniques with unprecedented selectivity between …

Pulsed plasmas have emerged as promising candidates as a means for precise control of
ion energy/angle dependent surface processes and surface chemistry during the plasma …

This study proposes a top-down approach for fabricating high aspect ratio AlN pillars with m-
oriented nonpolar sidewalls, which will serve as the first building block for the fabrication of …

Time-dependent studies of pulsed inductively coupled Ar and Ar/CF 4 discharges are
presented in this work. By using a time-resolved power diagnosis system, ie, a Langmuir …

Comparisons between measurements and spatially-averaged (0D) simulations of low-
pressure Ar and Cl 2 pulsed-plasmas in an industrial inductively coupled reactor are …

To achieve the etching of silicon nitride spacers with a perfect anisotropy and an almost
infinite selectivity, an alternative method consisting of two sequential steps—surface …

A comparative study of argon (Ar) and helium (He) plasmas is conducted in quasi‐atomic
layer etching (ALE) processes for silicon (Si). The ALE window is identified to be between 35 …

The best strategies to transfer nanoholes formed from the self-assembly of Polystyren/
Polymethylmethacrylate (PS/PMMA) based block copolymers into a silicon substrate are …

The etch characteristics of Si and TiO 2 nanostructures for optical devices were investigated
using pulse biased inductively coupled plasmas (ICP) with SF 6/C 4 F 8/Ar and BCl 3/Ar …

A bias power is usually applied in inductively coupled plasmas (ICP) to realize the separate
control of the plasma density and the ion energy. In this research, a two-dimensional …