The ion flux and ion velocity distribution function are studied using a capacitively coupled
radio frequency ion flux probe and a multigrid retarding field analyzer in an HBr/O 2 pulsed …

Si 3 N 4 spacer etching processes are one of the most critical steps of transistor fabrication
technologies since they must be at the same time very anisotropic to generate straight …

Almost electron-free (ion-ion) plasmas can be transiently formed during the afterglow phase
of pulsed plasmas in electronegative gases. In ion-ion plasmas, both positive and negative …

Pulsed plasmas are promising candidates to go beyond limitations of continuous waves'
plasma. However, their interaction with surfaces remains poorly understood. The authors …

The metrics for controlling reactive fluxes to wafers for microelectronics processing are
becoming more stringent as feature sizes continue to shrink. Recent strategies for controlling …

In this short review, the evolution of plasma etching technologies used in microelectronics
fabrication since the discovery of the reactive ion etching process 50 years ago is explored …

Controlling time averaged ion energy distribution (IED) is becoming increasingly important
in many plasma material processing applications for plasma etching and deposition. The …

An experimental study on the quasi-neutral beam extracted by a neutralizer-free gridded ion
thruster prototype was presented. The prototype was designed using an inductively coupled …

Inductively coupled plasma (ICP) has been widely used in semiconductor manufacturing,
especially in nanoscale etching and deposition process. It is important to understand the …

Several issues associated with plasma etching of high aspect ratio structures originate from
the ions' bombardment of the sidewalls of the feature. The off normal angle incident ions are …