(Digital Presentation) Characterization and Compression Technology of Real 3D Corner Residue Between Dummy Gate and Formed Fin During an Advanced …

X Xiao, Y Wang, B Su, X Ke, S Ji, HY Zhang - ECS Transactions, 2022 - iopscience.iop.org
3-Dimesional corner residue between Fin and gate bottom plays a key role in gate profile
definition and device performance, while the characterization and compression remain …

Directed self-assembly of PS-b-PDMS into 193nm photoresist patterns and transfer into silicon by plasma etching

S Archambault, C Girardot, M Salaün… - … Etch Technology for …, 2014 - spiedigitallibrary.org
Block CoPolymer (BCP) self-assembly creates periodical patterns with feature sizes
eventually below 10 nm. On plain substrates, ordering is only obtained in grains not larger …

Multiple frequency electron cyclotron resonance thruster

BA Jorns, BN Wachs - US Patent 11,699,575, 2023 - Google Patents
An electron cyclotron resonance (ECR) thruster includes a magnetic field source configured
to generate a magnetic field, a thruster body that defines a chamber, the thruster body being …

[PDF][PDF] Emilie Despiau-Pujo, Alexandra Davydova, Gilles Cunge & David

B Graves - researchgate.net
To assist the development of plasma processes to pattern graphene in a controlled way,
interactions between hydrogen plasma species (H, H?, H2?) and various types of graphene …

Vers une gravure plasma de precision nanometrique: Simulations de dynamique moleculaire en chimie Si-Cl

P Brichon - 2015 - theses.hal.science
Ce travail de thèse aborde le problème de la gravure de matériaux ultraminces pour la
réalisation de nouvelles générations de transistors (FDSOI, FinFET) dans les dispositifs …

Numerical Investigation of RF Pulsing Effect on Ion Energy Distributions at RF-biased Electrodes

DC Kwon, MY Song, JS Yoon - Applied Science and Convergence …, 2014 - koreascience.kr
The ion energy distributions (IEDs) arriving at a substrate strongly affect the etching rates in
plasma etching processes. In order to determine the IEDs accurately, it is important to obtain …

[图书][B] Neutral Beam Etching

Z El Otell - 2013 - search.proquest.com
The aim of this research is to better understand the behaviour of pulsed discharges and
electron dynamics for the purpose of tailoring the plasma properties for neutral beam etching …