S Rha, J Baek, W You, S Ahn, N Lee - US Patent 9,711,453, 2017 - Google Patents
Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an …
IT Emesh - US Patent 10,665,503, 2020 - Google Patents
A method for at least partially filling a feature on a workpiece generally includes obtaining a workpiece including a feature depositing a first conformal conductive layer in the feature …
S Rha, J Baek, W You, S Ahn, N Lee - US Patent 9,953,924, 2018 - Google Patents
Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an …
S Rha, J Baek, W You, S Ahn, N Lee - US Patent 10,269,712, 2019 - Google Patents
Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an …
A Kakimoto, A Endo, T Miyahara, S Nakajima… - US Patent …, 2017 - Google Patents
(57) ABSTRACT A thin film forming method which forms a seed film and an impurity- containing silicon film on a surface of an object to be processed in a processing container …
HL Chang, HC Tsai, YC Lu, SM Jang - US Patent 8,999,842, 2015 - Google Patents
A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a …
S Rha, J Baek, W You, S Ahn, N Lee - US Patent 10,707,164, 2020 - Google Patents
Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an …
SW Baek, MS Kim - US Patent 10,096,397, 2018 - Google Patents
Provided is a method for manufacturing a molded plastic products having copper-based compound particulates. The method includes the steps of: reacting copper sulfate with …
HL Chang, HC Tsai, YC Lu, SM Jang - US Patent 9,219,036, 2015 - Google Patents
A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a …