Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its
principal application in the determination of surface topography. However, the use of the …

The research and development of nanotechnology has led to materials science and
engineering entering the “nanomaterial era”. It is pivotal for analyzing the physicochemical …

Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally
doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in …

In this work, we systematically investigated the force dependence of conductive atomic force
microscopy on n-type Si and n-type GaAs. IV curves were recorded under different tip …

The realization of practical semiconductor nanowire optoelectronic devices requires
controlling their electrical transport properties, which are affected by their large …

A simple and effective method for the management of the passive layer in solid state
batteries is reported. The success is achieved using a composite cathode with embedded …

Cross-sectional spreading resistance microscopy has been used to investigate nanoscale
variations in electronic properties of an undoped Al 0.75 Ga 0.25 N/Al 0.95 Ga 0.05 N …

Abstract MOCVD grown Al1‐xInxN/AlN/GaN heterostructures have been characterized by
atomic force microscopy (AFM) in semi‐contact and conductive mode. The surface of In …

Strained silicon (Si) and silicon-germanium (SiGe) devices have long been recognised for
their enhanced mobility and higher on-state current compared with bulk-Si transistors …