[PDF][PDF] 无杂质空位诱导量子阱混杂研究及应用现状
林涛， 孙航， 张浩卿， 林楠， 马骁宇… - Laser & Optoelectronics …, 2015 - researching.cn
摘要自量子阱混杂发现以来, 其在这几十年的发展中取得了巨大进步. 在各种量子阱混杂的方法
中, 无杂质空位扩散诱导量子阱混杂(IFVD) 以其独特的优势获得了细致的研究和广泛的应用 …
中, 无杂质空位扩散诱导量子阱混杂(IFVD) 以其独特的优势获得了细致的研究和广泛的应用 …
Selective intermixing of InGaAs/GaAs quantum dot infrared photodetectors
I McKerracher, J Wong-Leung, G Jolley… - IEEE Journal of …, 2011 - ieeexplore.ieee.org
Quantum dot infrared photodetectors have generated significant interest in recent years.
They have the potential to outperform quantum well detectors in terms of normal-incidence …
They have the potential to outperform quantum well detectors in terms of normal-incidence …
InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants
We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD)
laser structure based on seven dielectric capping layers. Compared to the typical SiO 2 and …
laser structure based on seven dielectric capping layers. Compared to the typical SiO 2 and …
Postgrowth intermixing of strain engineered InAs/GaAs quantum dots
This paper reports on the evolution of InAs/GaAs quantum dots'(QDs) intermixing process
depending on the QD position with respect to the InGaAs strain reducing layer. The …
depending on the QD position with respect to the InGaAs strain reducing layer. The …
Quantum dot materials toward high-speed and ultrafast laser applications
X Wang, J Ning, C Zheng, Z Zhang - Quantum Dot Optoelectronic Devices, 2020 - Springer
Abstract Self-assembled In (Ga) As/GaAs quantum dots (QDs) have attracted much attention
for both high-speed and ultrafast laser applications because of their fascinating optical and …
for both high-speed and ultrafast laser applications because of their fascinating optical and …
Selective disordering of InAs/InGaAs dots-in-a-well structure patterned with sol-gel derived SiO2 strips imprinted by soft mold technique
CK Chia, M Suryana, W Zhao, HY Low… - Applied Physics …, 2008 - pubs.aip.org
Selective impurity free vacancy disordering of InAs/InGaAs quantum dot (QD) structures
imprinted with sol-gel derived SiO 2 strips via a polyethylene terepthalate soft mold has …
imprinted with sol-gel derived SiO 2 strips via a polyethylene terepthalate soft mold has …
[PDF][PDF] Bandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devices
HH Alhashim - 2016 - repository.kaust.edu.sa
The main objectives of this thesis are to develop viable process and/or device technologies
for bandgap tuning of 1300-nm InGaAs/GaAs quantum-dot (QD) laser structures, and broad …
for bandgap tuning of 1300-nm InGaAs/GaAs quantum-dot (QD) laser structures, and broad …
Effects of rapid thermal annealing on the optical properties of InAs/(In) GaAs quantum dots with different areal density
ZG Li, M You, GJ Liu, X Gao, L Li, Y Wang, LH Li - Optik, 2014 - Elsevier
The effects of rapid thermal annealing on the optical properties of InAs/(In) GaAs quantum
dots (QDs) with different areal density were investigated by photoluminescence (PL) …
dots (QDs) with different areal density were investigated by photoluminescence (PL) …
DIRECT IMPRINTING OF SiO2 WAVEGUIDE STRUCTURES ON GaAs AND ITS APPLICATION IN InAs/GaAs QUANTUM DOT INTERMIXING
CK Chia, M Suryana, W Zhao, HY Low… - International Journal of …, 2009 - World Scientific
A novel approach for intermixing of InAs/GaAs quantum dot (QD) structure by direct
imprinting of SiO 2 strips using silicafilm is presented. The silicafilm SiO 2 strips were …
imprinting of SiO 2 strips using silicafilm is presented. The silicafilm SiO 2 strips were …