Band gap versus composition and demonstration of Vegard's law for In1− xGaxAsyP1− y lattice matched to InP
RE Nahory, MA Pollack, WD Johnston… - Applied Physics …, 1978 - pubs.aip.org
Measurements of lattice parameters and compositions for Inl_xGaxAsyPI_y lattice matched
to InP demonstrate the validity of Vegard's law for this quaternary. The measured …
to InP demonstrate the validity of Vegard's law for this quaternary. The measured …
[图书][B] Semiconductor optical amplifiers
NK Dutta, Q Wang - 2013 - books.google.com
This invaluable book provides a comprehensive treatment of design and applications of
semiconductor optical amplifiers (SOA). SOA is an important component for optical …
semiconductor optical amplifiers (SOA). SOA is an important component for optical …
Negative affinity 3–5 photocathodes: Their physics and technology
WE Spicer - Applied physics, 1977 - Springer
Negative electron affinity (NEA) photocathodes are defined by the relationship between the
potential barrier at the surface and the bottom of the conduction band in the bulk of the …
potential barrier at the surface and the bottom of the conduction band in the bulk of the …
Bandgap and lattice constant of GaInAsP as a function of alloy composition
RL Moon, GA Antypas, LW James - Journal of electronic materials, 1974 - Springer
Published data for the composition dependence of the room-temperature bandgap (E g) and
lattice constant (ao) in the pseudobinary Ga y In 1-y As, Ga y In 1-y P, GaAs x P lx, and InAs …
lattice constant (ao) in the pseudobinary Ga y In 1-y As, Ga y In 1-y P, GaAs x P lx, and InAs …
Electronic Properties of Vertically Stacked h-BN/B1–xAlxN Heterojunction on Si(100)
R Chen, Q Li, Q Zhang, M Wang, W Fang… - … Applied Materials & …, 2023 - ACS Publications
Hexagonal boron nitride (h-BN) exhibits a dangling bond-free layered structure and
ultrawide band gap, which is apt to integrate with other semiconductors to form a …
ultrawide band gap, which is apt to integrate with other semiconductors to form a …
Solid-liquid equilibria for quaternary solid solutions involving compound semiconductors in the regular solution approximation
AS Jordan, M Ilegems - Journal of Physics and Chemistry of Solids, 1975 - Elsevier
Liquidus equations for solid-liquid equilibria in quaternary systems involving compound
semiconductors are presented in both thermodynamic (model-independent) and regular …
semiconductors are presented in both thermodynamic (model-independent) and regular …
Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 µm
JJ Hsieh - Integrated Optics, 1976 - opg.optica.org
This paper reports the room-temperature operation of Ga 1-x In x As 1-y P y/InP double-
heterostructure (DH) diode lasers. Broad-area devices emitting at 1.1 µm have been …
heterostructure (DH) diode lasers. Broad-area devices emitting at 1.1 µm have been …
LPE In1− xGaxP1− zAsz (x∼ 0.12, z∼ 0.26) DH laser with multiple thin‐layer (< 500 Å) active region
EA Rezek, N Holonyak, BA Vojak, GE Stillman… - Applied Physics …, 1977 - pubs.aip.org
A liquid· phase-epitaxial (LPE) double-heterojunction (DH) laser structure with an-1-/Lm"
active region" consisting of~ 20 Inl_. Ga. Pl_zAsz and InP lattice-matched thin layers is …
active region" consisting of~ 20 Inl_. Ga. Pl_zAsz and InP lattice-matched thin layers is …
Solvothermal preparation and spectroscopic characterization of copper indium diselenide nanorods
YH Yang, YT Chen - The Journal of Physical Chemistry B, 2006 - ACS Publications
Single-crystalline chalcopyrite CuInSe2 nanorods (CuInSe2NRs) of 50− 100 nm in diameter
and up to a few micrometers in length have been synthesized solvothermally. High …
and up to a few micrometers in length have been synthesized solvothermally. High …
Composition dependence of the band gaps of In1−xGaxAs1−yPy quaternary solids lattice matched on InP substrates
K Nakajima, A Yamaguchi, K Akita… - Journal of Applied Physics, 1978 - pubs.aip.org
The In‐Ga‐As‐P quaternary phase diagram required for the growth of lattice‐matched In1− x
Ga x As1− y P y layers on InP substrates has been determined experimentally at 650° C …
Ga x As1− y P y layers on InP substrates has been determined experimentally at 650° C …