Optical and magneto-optical characterization of the Al acceptor levels in Bi12SiO20

B Briat, TV Panchenko, HB Rjeily, A Hamri - JOSA B, 1998 - opg.optica.org
Al-doped Bi 12 SiO 20 is investigated with respect to optical absorption, magnetic circular
dichroism, and the optical detection of electron paramagnetic resonance. Two paramagnetic …

Thermally stimulated processes related to photochromism of scandium doped sillenites

M Załȩski - Journal of Applied Physics, 2000 - pubs.aip.org
The low temperature photochromism of the scandium doped sillenites was investigated. The
time dependence of the light induced absorption was measured for different conditions of …

Photoinduced absorption study of carrier dynamics in Ru-doped Bi12SiO20 crystals after nanosecond laser pulse excitation

V Marinova, I Ahmad, E Goovaerts - Journal of Applied Physics, 2010 - pubs.aip.org
The charge carrier dynamics in the sillenite type crystal Bi 12 SiO 20 (BSO) doped with
ruthenium is studied by monitoring the optical density changes after nanosecond laser pulse …

[PDF][PDF] Thermally activated spectroscopy of optical absorption in Bi12SiO20 crystals

T Panchenko, L Karpova - Ukr. J. Phys. Opt, 2020 - ifo.lviv.ua
We suggest applying a method of thermally activated spectroscopy to the problem of
impurity optical absorption. The method consists in measuring the temperature dependence …

[PDF][PDF] Thermochromic Effect in Doped Bi₁₂SiO₂₀ Crystals

A Diachenko, T Panchenko - Acta Physica Polonica A, 2018 - bibliotekanauki.pl
Optical-temperature investigations of stationary and photo-induced absorption in undoped
and Al (or Ga) doped Bi₁₂SiO₂₀ crystals are discussed. In the wave-number range …

Thermooptical investigation of deep levels in doped Bi12SiO20 crystals

TV Panchenko - Physics of the Solid State, 1998 - Springer
The temperature dependence of the impurity optical absorption of nominally pure Bi 12 SiO
20 (BSO) crystals and BSO crystals doped with Ga, Cr, Mn, and Ag ions is investigated. A …

Temperature dependence of electron mobility in and using the time-of-flight technique

D Bloom, SWS McKeever - Journal of applied physics, 1997 - pubs.aip.org
We have measured the temperature dependence of the electron mobility between∼ 200
and 300 K in undoped and 0.3% Fe-doped Bi 12 GeO 20 (BGO) and undoped Bi 12 SiO 20 …

Photo-and thermally induced optical absorption and photoconductivity of sillenite crystals

TV Panchenko - Physics of the Solid State, 2000 - Springer
A study is reported of photo-and thermally induced changes in the optical absorption and
photo-conductivity spectra of Bi 12 SiO 20 crystals in the 0.5–3.5 eV spectral interval, and of …

Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity

EY Lee, BA Brunett, RW Olsen… - Hard X-Ray and …, 1998 - spiedigitallibrary.org
The electric properties of CdZnTe radiation detectors are largely determined by the electron
and hole traps in this material. The traps, in addition to degrading the detector performance …

Kinetics of the photorefractive response of bismuth silicon oxide

JS McCullough, AM Georgalas, CA Hunt… - Journal Of Applied …, 2001 - pubs.aip.org
The kinetics of production and dark decay of index gratings in Bismuth Silicon Oxide was
investigated as a function of write-beam intensity at 300 K and of temperature over the 20 …