The increasing sensitivity of porous low dielectric constant materials to process damage
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …

Surface Brillouin light scattering measurements are used to determine the elastic constants
of nano-porous low-k SiOC: H (165 nm) and high-k HfO 2 (25 nm) as well as BN: H (100 nm) …

Fluorocarbon polymer deposited on a checkerboard wafer composed of low-k dielectrics
and TiN dies (2× 2 cm squares) was used as a model polymer for wet removal experiments …

Porous SiCOH materials integration for integrated circuits faces serious challenges such as
roughening during the etch process. In this study, atomic force microscopy is used to …

A fluorocarbon polymer generated by plasma polymerization of CF 4/CH 2 F 2 used as a
model polymer for sidewall residues was subjected to ultraviolet (UV) irradiation (λ= 254 …

In modern integrated circuits (ICs), billions of transistors are connected to each other via thin
metal layers (eg copper, cobalt, etc) known as interconnects. At elevated process …

This work focuses on the formation of residues that grow on a metallic-hard mask after
etching of porous low-k materials in fluorocarbon-based plasmas. The residue growth, which …

New multipass optical lithography patterning methods needed to print features for future< 10
nm technologies will demand an increasingly complex combination of hardmasks …

The patterning of narrow trenches in porous SiOCH with a metallic hard mask can lead to
the undulation of the dielectric lines between the trenches, also called wiggling. This …