Inertial and degradation delay model for CMOS logic gates

J Juan-Chico, PR de Clavijo, MJ Bellido… - … on Circuits and …, 2000 - ieeexplore.ieee.org
The authors present the Inertial and Degradation Delay Model (IDDM) for CMOS digital
simulation. The model combines the degradation delay model presented in previous papers …

Modeling and design of a nano scale cmos inverter for symmetric switching characteristics

J Mukhopadhyay, S Pandit - VLSI Design, 2012 - Wiley Online Library
This paper presents a technique for the modeling and design of a nano scale CMOS inverter
circuit using artificial neural network and particle swarm optimization algorithm such that the …

Output transition time modeling of CMOS structures

P Maurine, M Rezzoug… - ISCAS 2001. The 2001 …, 2001 - ieeexplore.ieee.org
Non zero signal rise and fall times contribute significantly to CMOS gate performances such
as propagation delay or short circuit power dissipation. We present a closed form expression …

Degradation delay model extension to CMOS gates

J Juan-Chico, MJ Bellido, P Ruiz-de-Clavijo… - Integrated Circuit Design …, 2000 - Springer
This contribution extends the Degradation Delay Model (DDM), previously developed for
CMOS inverters, to simple logic gates. A gate-level approach is followed. At a first stage, all …

Characterization of normal propagation delay for delay degradation model (DDM)

A Millán, J Juan, MJ Bellido, P Ruiz-de-Clavijo… - … Workshop on Power …, 2002 - Springer
In previous papers we have presented a very accurate model that handles the generation
and propagation of glitches, which makes an important headway in logic timing simulation …

[图书][B] High power microwave interference effects on analog and digital circuits in IC's

KC Kim - 2007 - search.proquest.com
Microwave or electromagnetic interference (EMI) can couple into electronic circuits and
systems intentionally from high power microwave (HPM) sources or unintentionally due to …

A precise negative bias temperature instability sensor using slew-rate monitor circuitry

A Ghosh, RB Brown, RM Rao… - 2009 IEEE International …, 2009 - ieeexplore.ieee.org
Negative Bias Temperature Instability (NBTI) has become an important cause of degradation
in scaled PMOS devices, affecting power, performance, yield and reliability of circuits. This …

HALOTIS: High accuracy logic timing simulator with inertial and degradation delay model

PR de Clavijo Vazquez, J Juan-Chico… - … Automation and Test …, 2001 - ieeexplore.ieee.org
This paper presents HALOTIS, a novel high accuracy logic timing simulation tool, that
incorporates a new simulation algorithm based on different concepts for transitions and …

Gaussian pulse approximation using standard CMOS and its application for sub‐GHz UWB impulse radio

X Zhang, M Elgamel… - International Journal of …, 2010 - Wiley Online Library
Gaussian pulse is widely used in communication systems. The true Gaussian function is not
physically realizable, but it can be approximated through linear functions. This paper …

Modeling the dynamic behavior of series-connected MOSFETs for delay analysis of multiple-input CMOS gates

L Bisdounis, O Koyfopavlou - 1998 IEEE International …, 1998 - ieeexplore.ieee.org
In this paper the dynamic behavior of series-connected MOSFETs is studied, in order to
compute the propagation delay of multiple-input static CMOS gates. A method for the …