The functionalities and performances of today's computing systems are increasingly
dependent on the memory block. This phenomenon, also referred as the Von Neumann …

Area selective atomic layer deposition (AS-ALD) of metals and metal oxides as well as
vacuum ultraviolet (VUV) enhanced annealing is presented as next generation …

In this work, we investigated the etching characteristics of TiO 2, and SiO 2 thin films and the
selectivity of TiO 2 to SiO 2 in a CF 4/Ar adaptively coupled plasma (ACP) system. The …

The authors studied the behavior of Ti hardmasks in CF 4/Ar and C 4 F 8/Ar discharges
using conditions relevant to pattern transfer processes into organosilicate glass (OSG), a …

With technology node shrinks in logic/foundry, patterning etch and Titanium Nitride (TiN)
Hard Mask Open (HMO) are facing increasing challenges on on-wafer performance and …

We investigated the mechanism of premature etch stop in magnetic tunnel junction (MTJ)
patterning using CO/NH 3 plasma with a Ta mask to clarify the cause of etch-stop problem in …

The results described in this paper first demonstrate key differences between a plasma-
exposed blanket porous dielectric sample and a patterned structure in terms of surface …

The formation of the residues after patterning of a patterned metal hard mask/dielectric stack
was characterized using surface-sensitive methods (attenuated total reflection-Fourier …

La miniaturisation des circuits intégrés permet à la fois d'augmenter les performances mais
aussi de réduire leur coût. Cependant, cette réduction des dimensions provoque la …

In this work, we investigated the etching characteristics of HfAlO3 thin films and the
selectivity of HfAlO3 to Si and SiO2 in a CF4/Ar inductively coupled plasma (ICP) system …