Mechanical Properties of Low- and High-k Dielectric Thin Films by Brillouin Light Scattering
J Zizka - 2016 - rave.ohiolink.edu
Brillouin light scattering (BLS) is a powerful tool for studying acoustics and determining
mechanical properties for an array of material types of varying structures. Specific to this …
mechanical properties for an array of material types of varying structures. Specific to this …
Limites de l'intégration des masques de gravure et d'un matériau diélectrique hybride pour la fabrication des interconnexions en microélectronique
J Ducoté - 2010 - theses.hal.science
À partir des noeuds technologiques 45nm, les lignes métalliques des interconnexions des
composants microélectroniques sont isolées entre elles par des matériaux diélectriques à …
composants microélectroniques sont isolées entre elles par des matériaux diélectriques à …
Influence of C2F6 Addition to Cl2/Ar Gas on Nanometer-Scale Etch Characteristics of TiN Thin Films Using Inductively Coupled Plasma
JS Choi, DH Cho, ET Lim… - ECS Journal of Solid State …, 2018 - iopscience.iop.org
Micro-and nano-scale patterned TiN thin films were etched in Cl 2/Ar and Cl 2/C 2 F 6/Ar
gases by inductively coupled plasma reactive ion etching. As C 2 F 6 gas was added to the …
gases by inductively coupled plasma reactive ion etching. As C 2 F 6 gas was added to the …
[PDF][PDF] BCl3/He 유도결합플라즈마를이용한TiN 박막의식각특성
주영희， 우종창， 김창일 - 전기전자재료학회논문지(J. Korean Inst …, 2012 - academia.edu
We investigated the dry etching characteristics of TiN in TiN/Al2O3 gate stack using a
inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching …
inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching …
Dry Etching Characteristics of TiN Thin Films in BCl3/He Inductively Coupled Plasma
YH Joo, JC Woo, CI Kim - Journal of the Korean Institute of …, 2012 - koreascience.kr
We investigated the dry etching characteristics of TiN in $ TiN/Al_2O_3 $ gate stack using a
inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching …
inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching …
[图书][B] Plasma interactions with masking materials for nanofabrication
FGC Weilnboeck - 2011 - search.proquest.com
Plasma-based transfer of patterns into other materials is a key process for production of
nano-scale devices used in micro-electronic technology. With the continuously decreasing …
nano-scale devices used in micro-electronic technology. With the continuously decreasing …
[引用][C] Development and Characterization of metal oxide RRAM memory cells
M Barlas, Y Leblebici - 2015 - MSc Thesis, École Polytechnique …