Broadband high-efficiency millimeter-wave power amplifiers in 22-nm CMOS FD-SOI with fixed and adaptive biasing
JTTU Mayeda, CTTU Sweeney, DYC Lie, JTTU Lopez - 2022 - ttu-ir.tdl.org
The design of broadband highly-efficient millimeter-wave (mm-Wave) Power Amplifiers (PA)
in 22-nm CMOS FD-SOI (fully depleted silicon-on-insulator) is discussed. One design uses …
in 22-nm CMOS FD-SOI (fully depleted silicon-on-insulator) is discussed. One design uses …
Broadband millimeter-wave 5G CMOS power amplifiers with high efficiency at power backoff and ESD-protection in 22nm FD-SOI
J Mayeda, DYC Lie, J Lopez - 2021 IEEE International Midwest …, 2021 - ieeexplore.ieee.org
Several broadband medium-power millimeter-wave power amplifiers (mm-Wave PAs) are
designed using GlobalFoundries' 22-nm fully-depleted silicon on insulator (FD-SOI) CMOS …
designed using GlobalFoundries' 22-nm fully-depleted silicon on insulator (FD-SOI) CMOS …
A 19.1-46.5 GHz Broadband Efficient Power Amplifier in 22nm CMOS FD-SOI for mm-Wave 5G
In this paper, we discuss the design and measurement results of a very broadband and
efficient millimeter-wave (mm-Wave) medium-power power amplifier (PA) for potential mm …
efficient millimeter-wave (mm-Wave) medium-power power amplifier (PA) for potential mm …
Broadband millimeter-wave 5G power amplifier design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT
J Mayeda, DYC Lie, J Lopez - Electronics, 2022 - mdpi.com
Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of
24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are …
24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are …
A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS
LW Ouyang, JC Mayeda, C Sweeney, DYC Lie… - Applied Sciences, 2024 - mdpi.com
This paper presents a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA)
designed in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology …
designed in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology …
A Two-Way Power-Combining 60GHz CMOS Power Amplifier with 22.0% PAE and 19.4 dBm Psat in 65nm Bulk CMOS
In this paper, the analysis and design of a 57-64 CMOS Power Amplifier is discussed. The
power-combining technique and the capacitor neutralization technique are applied to boost …
power-combining technique and the capacitor neutralization technique are applied to boost …
Ka-Band stacked power amplifier on 22 nm CMOS FDSOI technology utilizing back-gate bias for linearity improvement
J Rusanen, M Hietanen, A Sethi… - 2019 IEEE Nordic …, 2019 - ieeexplore.ieee.org
This paper presents a method for extending millimeter wave power amplifier (PA) linear
range by fine tuning the CMOS SOI device output characteristics via back-gate biasing. The …
range by fine tuning the CMOS SOI device output characteristics via back-gate biasing. The …
A Dual-Band 28/38-GHz Power Amplifier With Inter-Band Suppression in 22-nm FD-SOI CMOS for Multi-Standard mm-Wave 5G Communications
In this article, we present a dual-band 28/38-GHz power amplifier (PA) with inter-band
suppression for millimeter-wave 5G communications. The dual-band operation is achieved …
suppression for millimeter-wave 5G communications. The dual-band operation is achieved …
Highly-Efficient Broadband Medium Power Amplifier Design in 22nm CMOS FD-SOI for mm-Wave 5G
JC Mayeda, J Lopez, DYC Lie - 2020 IEEE Texas Symposium …, 2020 - ieeexplore.ieee.org
We present in this work a reconfigurable broadband highly-efficient medium-power power
amplifier (PA) design in 22nm FD-SOI for potential millimeter-wave (mm-Wave) 5G (5 th …
amplifier (PA) design in 22nm FD-SOI for potential millimeter-wave (mm-Wave) 5G (5 th …
Ka-Band Dual Input Stacked 22 nm CMOS FDSOI Power Amplifier with Transformer-Based Power Combiner
J Rusanen, N Tervo, T Rahkonen… - 2020 15th European …, 2021 - ieeexplore.ieee.org
A Ka-band dual input, three stack power amplifier (PA) is designed and fabricated using
22nm CMOS FDSOI. The PA output matching is implemented with a transformer-based …
22nm CMOS FDSOI. The PA output matching is implemented with a transformer-based …