Tri-state nanoelectromechanical memory switches for the implementation of a high-impedance state

G Baek, J Yoon, WY Choi - IEEE Access, 2020 - ieeexplore.ieee.org
Tri-state nanoelectromechanical (NEM) memory switches are proposed for the
implementation of high-impedance state 0 in addition to low-impedance states 1 and 2 for …

Low voltage cold and hot switching in nanoswitches cleaned by in situ oxygen plasma can achieve low stable contact resistance

D Kumar, CM Walker, MP de Boer - Journal of Applied Physics, 2024 - pubs.aip.org
Reliable nanoswitch operation requires low contact voltages and stable electrical contact
resistance (ECR). Surface cleanliness is crucial to prevent nanomechanical switch failure …

Low voltage, high speed and small area in-plane MEMS switch

W Bian, J Zhao, Z You - Journal of Micromechanics and …, 2019 - iopscience.iop.org
Electrostatic in-plane microelectromechanical systems (MEMS) relays/switches are widely
applied for their low power consumption and simple process. However, compared to the out …

Slingshot pull-in operation for low-voltage nanoelectromechanical memory switches

WY Choi, HS Kwon - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
A novel “slingshot” pull-in operation is proposed to lower the operation voltage () of
nanoelectromechanical (NEM) memory switches for the implementation of monolithic 3-D …

[图书][B] SiGe-Pocket Tunnel FETs for Low Power Logic Applications

W Li - 2019 - search.proquest.com
Over the last 50 years, conventional scaling (Moore's law) has provided continuous
improvement in semiconductor device/circuit technology and has resulted in unprecedented …

[图书][B] Design and Simulation of MEMS Actuators to Study Strain Behavior of 2D Materials

M Martinez - 2018 - search.proquest.com
Since the 60s the semiconductor industry has successfully been able to keep pace with
Moore's Law due to the effective scaling of the silicon-based transistor. However, as scaling …