This study focuses on the preparation of L a XO 3 (X= F e, M n, C r, N i) perovskite thin films
using a simple set-up spin coating technique and the evaluation of their properties for …

Exploring new synaptic electronic devices that combine computing and memory is a
promising strategy that fundamentally approaches intelligent machines. In this study, the …

In order to find high-performance memristor materials. we prepared cuprous phosphide (Cu
3 P) thick film by a simple chemical reaction method and studied its resistive switching …

Modern electronic devices are being developed for cutting-edge applications, as a result of
recent developments in artificial intelligence (AI) and machine learning (ML). The demand …

Abstract Copper Zinc Tin Sulfide (CZTS) is a well-known kesterite material having a variety
of optoelectronic applications. The constituent elements are earth abundant and non-toxic in …

Here, we demonstrate double-layer 3D vertical resistive random-access memory with a hole-
type structure embedding Pt/HfO x/AlN/TiN memory cells, conduct analog resistive switching …

Copper oxide thin films are grown using copper nanofilms oxidized at high annealing
temperatures. The thin film crystallinity and surface morphology are probed using the X-ray …

A facile chemical synthetic method was used to synthesize Cu x O thin films on glass
substrate via in-situ chemical reaction of CuI thin films in NaOH solution at ambient …

This paper demonstrates the synthesis, characterization, scalable fabrication and
heating/cooling measurements of nanostructured copper oxide (CuO) based reversible …

In the quest for efficient resistive switching (RS) materials for both non-volatile memory and
neuromorphic computing applications, a variety of functional materials have been …