[HTML][HTML] Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters
R Kudrawiec, D Hommel - Applied Physics Reviews, 2020 - pubs.aip.org
A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …
can be expanded when bandgap engineering is extended beyond common materials such …
Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions
The electronic band structure of MoS2, MoSe2, WS2, and WSe2, crystals has been studied
at various hydrostatic pressures experimentally by photoreflectance (PR) spectroscopy and …
at various hydrostatic pressures experimentally by photoreflectance (PR) spectroscopy and …
Temperature dependence of band gaps in dilute bismides
WM Linhart, R Kudrawiec - Semiconductor Science and …, 2018 - iopscience.iop.org
Abstract Knowledge about the temperature dependence of the fundamental band-gap
energy of semiconductors is very important and constitutes the basis for developing …
energy of semiconductors is very important and constitutes the basis for developing …
[图书][B] Bands and photons in III-V semiconductor quantum structures
Semiconductor quantum structures are at the core of many photonic devices such as lasers,
photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices …
photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices …
Direct optical transitions at K-and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2
Modulated reflectance (contactless electroreflectance (CER), photoreflectance (PR), and
piezoreflectance (PzR)) has been applied to study direct optical transitions in bulk MoS 2 …
piezoreflectance (PzR)) has been applied to study direct optical transitions in bulk MoS 2 …
GaSbBi/GaSb quantum well laser diodes
We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb
quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates …
quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates …
Tuneable 2D surface Bismuth incorporation on InAs nanosheets
The chemical bonding at the interface between compound semiconductors and metals is
central in determining electronic and optical properties. In this study, new opportunities for …
central in determining electronic and optical properties. In this study, new opportunities for …
Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties
Ł Gelczuk, J Kopaczek, TBO Rockett, RD Richards… - Scientific Reports, 2017 - nature.com
Deep-level defects in n-type GaAs1− x Bi x having 0≤ x≤ 0.023 grown on GaAs by
molecular beam epitaxy at substrate temperature of 378° C have been injvestigated by deep …
molecular beam epitaxy at substrate temperature of 378° C have been injvestigated by deep …
8-band and 14-band kp modeling of electronic band structure and material gain in Ga (In) AsBi quantum wells grown on GaAs and InP substrates
M Gladysiewicz, R Kudrawiec, MS Wartak - Journal of Applied Physics, 2015 - pubs.aip.org
The electronic band structure and material gain have been calculated for GaAsBi/GaAs
quantum wells (QWs) with various bismuth concentrations (Bi≤ 15%) within the 8-band and …
quantum wells (QWs) with various bismuth concentrations (Bi≤ 15%) within the 8-band and …
[HTML][HTML] Electromodulation spectroscopy of highly mismatched alloys
R Kudrawiec, W Walukiewicz - Journal of Applied Physics, 2019 - pubs.aip.org
The electronic band structure of highly mismatched alloys (HMAs) was very successfully
explored using electromodulation (EM) spectroscopy, ie, photoreflectance (PR) …
explored using electromodulation (EM) spectroscopy, ie, photoreflectance (PR) …