A 21-dBm 3.7 W/mm² 28.7% PAE 64-GHz power amplifier in 22-nm FD-SOI

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High-efficiency class-E power amplifiers for mmwave radar sensors: Design and implementation

T Dinc, S Kalia, S Akhtar, B Haroun… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents high-efficiency power amplifiers (PAs) implemented in Texas
Instruments'(TI) 130-nm BiCMOS process for-and-band millimeter-wave (mmWave) radar …
被引用次数：7 相关文章 所有 4 个版本

A 62-GHz High-Efficiency Power Amplifier With Modulation Capability via Back-Gate in 22-nm FD-SOI

X Xu, J Wagner, F Ellinger - IEEE Solid-State Circuits Letters, 2023 - ieeexplore.ieee.org
This letter presents a feasibility study for a 62-GHz power amplifier (PA) in a 22-nm CMOS
technology with integrated data modulation via the back-gate. The proposed PA consists of …
被引用次数：3 相关文章

Systematic Design Methodology for CMOS Millimeter-Wave Power Amplifiers With an -Band Fully Differential Implementation in 16-nm FinFET

M Lauritano, P Baumgartner, P Singh… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
The selection of the appropriate technology is a key problem for millimeter-wave (mmW)
circuits, especially for power amplifiers (PAs), due to the stringent power and efficiency …
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Doubly-tuned transformer-based class-E power amplifiers in 130 nm BiCMOS for mmWave radar sensors

T Dinc, S Akhtar, S Kalia, B Haroun… - 2021 IEEE Radio …, 2021 - ieeexplore.ieee.org
This paper presents high-efficiency V-band and E-band power amplifiers (PAs) for mmWave
radar sensors. High-efficiency mmWave operation is enabled by a doubly-tuned transformer …
被引用次数：4 相关文章

A Ku-Band Power Amplifier in 22nm FDSOI

A Haag, AÇ Ulusoy - 2024 IEEE 24th Topical Meeting on …, 2024 - ieeexplore.ieee.org
This paper presents the design of an 18 GHz power amplifier (PA) in GlobalFoundries' 22
nm fully-depleted silicon on insulator (FD-SOI) technology. The PA features a single-ended …
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A 76–81-GHz Power Amplifier With 14.6-dBm and 25.1% PAE on 22-nm FDSOI Technology

P Mehr, N Elsayed, J Lee, L Lu… - IEEE Microwave and …, 2023 - ieeexplore.ieee.org
A high-efficiency power amplifier (PA) is demonstrated on GlobalFoundries 22-nm fully
depleted silicon-on-insulator (FD-SOI) platform. The two-stack differential PA targets 77-GHz …
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