Germanium: Epitaxy and its applications

M Bosi, G Attolini - Progress in Crystal Growth and Characterization of …, 2010 - Elsevier
This paper reviews the most important properties of germanium, gives an insight into the
newer techniques and technology for the growth of epitaxial Ge thin layers and focuses on …

Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications

CY Tsao, JW Weber, P Campbell, PI Widenborg… - Applied Surface …, 2009 - Elsevier
Poly-crystalline germanium (poly-Ge) thin films have potential for lowering the
manufacturing cost of photovoltaic devices especially in tandem solar cells, but high …

Germanium as a versatile material for low-temperature micromachining

B Li, B Xiong, L Jiang, Y Zohar… - Journal of …, 1999 - ieeexplore.ieee.org
Though germanium (Ge) shares many similar physical properties with silicon (Si), it also
possesses unique characteristics that are complementary to those of Si. The advantages of …

Atmospheric pressure metal organic chemical vapor deposition of thin germanium films

R Fritzsche, DR Zahn, M Mehring - Journal of Materials Science, 2021 - Springer
The deposition of thin germanium films by atmospheric pressure metal organic chemical
vapor deposition at temperatures below 400° C on substrates such as silicon wafers, float …

Organic surface analysis by two-laser ion trap mass spectrometry. 2. Improved desorption/photoionization configuration

O Kornienko, ET Ada, J Tinka… - Analytical …, 1998 - ACS Publications
We previously described a two-laser ion trap mass spectrometer for molecular surface
analysis of organic, biological, and polymeric surfaces (Kornienko, O.; et al. Anal. Chem …

Methanol Pyrolysis-Mediated Reduction of GeO2 and Chemical Vapor Deposition of Polycrystalline Ge Films

MC Altay, S Eroglu - Metallurgical and Materials Transactions B, 2024 - Springer
Methanol is a renewable, low-carbon chemical that can be obtained from biomass. GeO2 is
the main source for producing Ge, which is an important semiconductor. The current study …

E‐Beam Patterning of Hot‐Filament CVD Fluorocarbon Films Using Supercritical CO2 as a Developer

HGP Lewis, GL Weibel, CK Ober… - Chemical Vapor …, 2001 - Wiley Online Library
Supercritical carbon dioxide as the development medium for patterning fluorocarbon films
deposited by hot‐filament CVD is described. This study is intended to merge the role of …

Thermal decomposition mechanisms of tetraethylgermane in metal-organic chemical vapor deposition

J El Boucham, F Maury, R Morancho - Journal of Analytical and Applied …, 1998 - Elsevier
Polycrystalline Ge thin films have been grown by MOCVD in an atmospheric laminar flow
reactor using GeEt4 as precursor. Hydrogen is required to remove the carbon contamination …

Selective chemical vapor synthesis of Cu3Ge: Process optimization and film properties

AP Peter, L Carbonell, M Schaekers, C Adelmann… - Intermetallics, 2013 - Elsevier
We report on the synthesis of Cu3Ge films by exposing Cu films to germane (GeH4). The
process window was established by investigating the influence of the GeH4 partial pressure …

[PDF][PDF] Si-Ge photodetection technologies for integrated optoelectronics

AK Okyay - 2007 - Citeseer
The communications bottleneck is identified as one of the grand challenges in the progress
of silicon computation. While individual logic elements have become significantly faster …