The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …

We demonstrate how the formation of octahedral microcrystals of arsenic oxide As2O3 in the
form of arsenolite with a size of 200 nm to 10 μm can be initiated by the electrochemical …

A quantum dot (QD) thin film of arsenic (III) oxide-hydroxide/polypyrrole (As2S3-As2O3/Ppy)
with a supernova-like shape has been developed for optoelectronic applications across a …

This study achieved the decoration of poly-3-methyl aniline (P3MA) with As2O3–As (OH) 3
using K2S2O8 and NaAsO2 on the 3-methyl aniline monomer. This resulted in a highly …

Mesoporous germanium (MP-Ge) has been predicted to play an important role in a wide
range of potential applications. These porous Ge networks are characterized by physical …

The study was undertaken to investigate deposition behaviors of various size-segregated
particles and indoor air quality using dust accumulated on the air conditioner filter acting as …

Усовершенствован способ фор-мирования пористого арсенида галлия в растворе
соляной кисло-ты. Исследованы основные зако-номерности формирования пори-стых …

This work reports the use of compacted graphene composites for the removal of As and Cr
heavy metal ions from contaminated water by electrodeposition. The removal of the metal …

The primary objective of this research is to address the energy challenges by introducing an
innovative nanocomposite material. This material is designed to facilitate the conversion of …

Schottky diode of porous n-GaAs layers have been prepared by chemical etching of n-type
GaAs (100) substrates in (3 and 5) M of phosphoric acid (H3PO4) for 1 min. The influences …