RS Dhar, D Ban - Journal of Microscopy, 2013 - Wiley Online Library
The distribution of charge carriers inside the active region of a terahertz (THz) quantum cascade laser (QCL) has been measured with scanning spreading resistance microscopy …
O Dixon-Luinenburg, U Celano, W Vandervorst… - Ultramicroscopy, 2019 - Elsevier
Quantitative scanning spreading resistance microscopy is currently a powerful method for carrier profiling in scaled nanoelectronic devices. Faced with the further reduction of …
One of the many crucial issues in fabricating state-of-the-art Complementary Metal Oxide Semiconductor transistors is the precise electrical characterization of Ultra-Shallow …
The external performance of quantum optoelectronic devices is governed by the three- dimensional profiles of electric potentials determined by the distribution of charge carriers …
RS Dhar, D Ban - Photonics North 2012, 2012 - spiedigitallibrary.org
Two-dimensional (2D) dopant profiling of the active region of THz quantum cascade laser (QCL) devices has been achieved with atomic force microscopy (AFM). Scanning spreading …