Scanning spreading resistance microscopy (SSRM) measurements were performed on
GaAs thick films grown by hydride vapor phase epitaxy technology under different growth …

The distribution of charge carriers inside the active region of a terahertz (THz) quantum
cascade laser (QCL) has been measured with scanning spreading resistance microscopy …

Quantitative scanning spreading resistance microscopy is currently a powerful method for
carrier profiling in scaled nanoelectronic devices. Faced with the further reduction of …

One of the many crucial issues in fabricating state-of-the-art Complementary Metal Oxide
Semiconductor transistors is the precise electrical characterization of Ultra-Shallow …

Актуальность темы. Разработка и создание новых материалов и структур для
полупроводниковой электроники требует соответствующего развития средств …

The external performance of quantum optoelectronic devices is governed by the three-
dimensional profiles of electric potentials determined by the distribution of charge carriers …

Two-dimensional (2D) dopant profiling of the active region of THz quantum cascade laser
(QCL) devices has been achieved with atomic force microscopy (AFM). Scanning spreading …