Exploiting asymmetric errors for LDPC decoding optimization on 3D NAND flash memory
By stacking layers vertically, the adoption of 3D NAND has significantly increased the
capacity for storage systems. The complex structure of 3D NAND introduces more errors …
capacity for storage systems. The complex structure of 3D NAND introduces more errors …
Improving LDPC performance via asymmetric sensing level placement on flash memory
Flash memory development through technology scaling and bit density has significant
impact on the reliability of flash cells. Hence strong error correction code (ECC) schemes are …
impact on the reliability of flash cells. Hence strong error correction code (ECC) schemes are …
Using error modes aware LDPC to improve decoding performance of 3-D TLC NAND flash
3-D triple-level cell (3-D TLC) NAND flash has high storage density and capacity, but
degrading data reliability due to high raw bit error rates induced by a certain number of …
degrading data reliability due to high raw bit error rates induced by a certain number of …
[PDF][PDF] Laldpc: Latency-aware ldpc for read performance improvement of solid state drives
High-density Solid State Drives (SSDs) have to use Low-Density Parity-Check (LDPC)
codes to store data reliably. Current LDPC implementations apply multiple read-retry steps …
codes to store data reliably. Current LDPC implementations apply multiple read-retry steps …
P-Alloc: Process-variation tolerant reliability management for 3D charge-trapping flash memory
Y Wang, L Dong, R Mao - ACM Transactions on Embedded Computing …, 2017 - dl.acm.org
Three-dimensional (3D) flash memory is an emerging memory technology that enables a
number of improvements to conventional planar NAND flash memory, including larger …
number of improvements to conventional planar NAND flash memory, including larger …
Pair-bit errors aware LDPC decoding in MLC NAND flash memory
By storing multibit per cell, multilevel cell (MLC) NAND flash memory achieves high storage
capacity, but sacrificing data reliability. Error correction codes, such as Bose–Chaudhuri …
capacity, but sacrificing data reliability. Error correction codes, such as Bose–Chaudhuri …
Heating dispersal for self-healing NAND flash memory
Substantially reduced lifetimes are becoming a critical issue in NAND flash memory with the
advent of multi-level cell and triple-level cell flash memory. Researchers discovered that …
advent of multi-level cell and triple-level cell flash memory. Researchers discovered that …
Process Variation Aware Read Performance Improvement for LDPC-Based nand Flash Memory
With the rapid development of technology scaling and cell density improvement for capacity
increase and cost reduction, nand flash memory is confronted with degraded reliability. On …
increase and cost reduction, nand flash memory is confronted with degraded reliability. On …
CooECC: A cooperative error correction scheme to reduce LDPC decoding latency in NAND flash
The storage capacity of NAND Flash has increased by scaling down to smaller cell size and
using multi-level storage technology, but data reliability is degraded by severer retention …
using multi-level storage technology, but data reliability is degraded by severer retention …
Invalid data-aware coding to enhance the read performance of high-density flash memories
W Choi, M Jung, M Kandemir - 2018 51st Annual IEEE/ACM …, 2018 - ieeexplore.ieee.org
High bit-density flash memories such as Multi-Level Cell (MLC) and Triple-Level Cell (TLC)
flash have become a norm, since doubling the cell bit-density can increase the storage …
flash have become a norm, since doubling the cell bit-density can increase the storage …