Perspectives on advances in quantum dot lasers and integration with Si photonic integrated circuits
Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to
obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs …
obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs …
Quantum dot lasers and amplifiers on silicon: recent advances and future developments
A self-assembled quantum dot (QD) gain medium has multiple favorable material properties
over conventional quantum well (QW) structures and bulk materials, including a large …
over conventional quantum well (QW) structures and bulk materials, including a large …
Transfer-print integration of GaAs pin photodiodes onto silicon nitride waveguides for near-infrared applications
We demonstrate waveguide-detector coupling through the integration of GaAs pin
photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer …
photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer …
Telecom InP-based quantum dash photodetectors grown on Si
Photodetectors on Si with high responsivity, large bandwidth, and multispectral operation
are required for high data rate communications using Si photonics. We report characteristics …
are required for high data rate communications using Si photonics. We report characteristics …
High performance near-infrared MoTe2/Ge heterojunction photodetector fabricated by direct growth of Ge flake on MoTe2 film substrate
W Lei, X Wen, G Cao, L Yang, P Zhang… - Applied Physics …, 2022 - pubs.aip.org
We demonstrated a feasible strategy to fabricate MoTe 2/Ge heterojunction by direct growth
of Ge flake on a MoTe 2 film substrate with a two-step chemical vapor deposition method. A …
of Ge flake on a MoTe 2 film substrate with a two-step chemical vapor deposition method. A …
High-speed waveguide-integrated avalanche photodiodes for near-infrared wavelengths on SiN-on-SOI photonic platform
S Yanikgonul, X Luo, GQ Lo - Journal of Lightwave Technology, 2022 - ieeexplore.ieee.org
Recently, there have been efforts on developing monolithically integrated avalanche
photodiodes (APDs) for visible and near-infrared (NIR) wavelengths. However, the …
photodiodes (APDs) for visible and near-infrared (NIR) wavelengths. However, the …
Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission
InAs quantum dashes (Qdash) engineered to emit near 2 μm are envisioned to be promising
quantum emitters for next-generation technologies in sensing and communications. In this …
quantum emitters for next-generation technologies in sensing and communications. In this …
All-in-one photoelectric logic gates by Dember photodetectors
Photoelectric logic gates (PELGs) are the key component in integrated electronics due to
their abilities of signal conversion and logic operations. However, traditional PELGs with …
their abilities of signal conversion and logic operations. However, traditional PELGs with …
Formation of strain reduced In0. 54Al0. 34Ga0. 12As layer of vertically coupled QDs arrays for O-band telecom single photon sources
B Tongbram, VP Deviprasad, AV Kumbhar… - Journal of Alloys and …, 2023 - Elsevier
We demonstrate the correlative research on the multi-stacked vertically coupled InAs
quantum dots (VCQDs) capped by 15 nm combinational capping layer of In (0.21) Al (0.21) …
quantum dots (VCQDs) capped by 15 nm combinational capping layer of In (0.21) Al (0.21) …
Vertical MoTe₂/Ge Heterojunction Photodiode for 1550-nm Near-Infrared Photodetection
W Lei, X Wen, L Yang, P Zhang, G Cao… - … on Electron Devices, 2022 - ieeexplore.ieee.org
We demonstrate a vertical MoTe2/Ge heterojunction near-infrared photodiode that exhibits a
low dark current density, an improved capacity of weak optical signal detection with a peak …
low dark current density, an improved capacity of weak optical signal detection with a peak …