Crash Recovery Techniques for Flash Storage Devices Leveraging Flash Translation Layer: A Review
A Alahmadi, TS Chung - Electronics, 2023 - mdpi.com
The flash storage is a type of nonvolatile semiconductor device that is operated continuously
and has been substituting the hard disk or secondary memory in several storage markets …
and has been substituting the hard disk or secondary memory in several storage markets …
Dynamic error recovery flow prediction based on reusable machine learning for low latency NAND flash memory under process variation
NAND flash memory is becoming smaller and denser to have a larger storage capacity as
technologies related to fine processes are developed. As a side effect of high-density …
technologies related to fine processes are developed. As a side effect of high-density …
DNN-based error level prediction for reducing read latency in 3D NAND flash memory
J He, X Yu, Q Li, B Zhang, X Wang, Q Zhao… - Microelectronics …, 2023 - Elsevier
Abstract 3D NAND Flash memory still suffers from many reliability issues in practice, such as
endurance and data retention errors. Meanwhile, due to process variation, pages with …
endurance and data retention errors. Meanwhile, due to process variation, pages with …
[引用][C] 반도체공정의변동이존재하는NAND 플래시메모리를위한ADDA 기반에러복구기법
이선민， 지정주， 박현철 - 한국통신학회학술대회논문집, 2022 - dbpia.co.kr
반도체 공정의 변동이 존재하는 NAND 플래시 메모리를 위한 ADDA 기반 에러 복구 기법
ADDA-based Error Page 1 반도체 공정의 변동이 존재하는 NAND 플래시 메모리를 위한 ADDA …
ADDA-based Error Page 1 반도체 공정의 변동이 존재하는 NAND 플래시 메모리를 위한 ADDA …