We demonstrate how the formation of octahedral microcrystals of arsenic oxide As2O3 in the
form of arsenolite with a size of 200 nm to 10 μm can be initiated by the electrochemical …

Purpose: of this paper is to justification the most rational method for the nanostructures
synthesis on the semiconductors surface, which is capable of providing high quality …

In this work, the double cell electrochemical etching technique is employed to study the
evolution of surface morphology during the etching of p-type gallium arsenide (GaAs) in a …

Purpose: The purpose of this study is to establish the quality of tests for determining the
chemical composition of the porous surface obtained by the method of electrochemical …

Chemoembolization for hepatocellular carcinoma (HCC) is often suboptimal due to multiple
involved signaling and lack of effective drugs. Arsenic trioxide (ATO) is a potent …

UV-assisted selective etching was proposed to raise the etching rate for rapid fabrication on
GaAs without templates. Within the same time, protrusive hillocks stemming from the …

The pomising uses of near infrared (NIR) phosphor converted light emitting diodes (pc-
LEDs), including non-destructive testing and biological implementations, are endless. It is …

This paper investigates the electrochemical dissolution processes of Gallium Arsenide
(GaAs) in an HF: C 2 H 5 OH electrolyte mixture. We elucidate the mechanism of oxide …

In this study, the use of triple-sheet phosphor arrangement (TRP) in performing significant
improvements to both color quality and luminous flux of white light emitting diode (WLEDs) is …

A high heat solid-state technique was used to produce a set of phosphor Sr 4 La (PO 4) 3 O:
Ce 3+, Tb 3+, Mn 2+(Sr: Mn). In Sr 4 La (PO 4) 3 O, the luminescence characteristics, heat …