Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

MZM Khan, TK Ng, BS Ooi - Progress in Quantum Electronics, 2014 - Elsevier
The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …

InAs/InP quantum-dash lasers and amplifiers

JP Reithmaier, G Eisenstein… - Proceedings of the …, 2007 - ieeexplore.ieee.org
InAs quantum-dash structures fabricated by self-assembly growth techniques and based on
compound semiconductors lattice matched to InP substrates were used to realize long …

Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures

M Gawełczyk, M Syperek, A Maryński, P Mrowiński… - Physical Review B, 2017 - APS
We present a theoretical and experimental investigation of exciton recombination dynamics
and the related polarization of emission in highly in-plane asymmetric nanostructures …

Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations

R Kudrawiec, J Misiewicz - Review of Scientific Instruments, 2009 - pubs.aip.org
Experimental setup for measurements of photoreflectance (PR) and contactless
electroreflectance (CER) spectra in bright and dark configurations is described in this work …

Carrier trapping and luminescence polarization in quantum dashes

A Musiał, P Kaczmarkiewicz, G Sęk, P Podemski… - Physical Review B …, 2012 - APS
We study experimentally and theoretically polarization-dependent luminescence from an
ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy …

Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam …

A Maryński, G Sęk, A Musiał, J Andrzejewski… - Journal of Applied …, 2013 - pubs.aip.org
The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-
like objects grown by molecular beam epitaxy have been investigated. These …

Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band

M Gawełczyk, P Wyborski, P Podemski, JP Reithmaier… - Physical Review B, 2019 - APS
We investigate strongly asymmetric self-assembled nanostructures with one of the
dimensions reaching hundreds of nanometers. Close to the nanowirelike type of …

Quantum dots as optimized chiral emitters for photonic integrated circuits

J Rosiński, M Gawełczyk, K Tarnowski, P Karwat… - Physical Review B, 2024 - APS
Chiral coupling, which allows directional interactions between quantum dots (QDs) and
photonic crystal waveguide modes, holds promise for enhancing the functionality of …

Toward weak confinement regime in epitaxial nanostructures: Interdependence of spatial character of quantum confinement and wave function extension in large and …

A Musiał, P Gold, J Andrzejewski, A Löffler, J Misiewicz… - Physical Review B, 2014 - APS
In this paper we present a comprehensive and detailed analysis of carrier/exciton wave
function extension in large low-strain In 0.3 Ga 0.7 As quantum dots (QDs). They exhibit …

From quantum dots to quantum dashes: Excitonic spectra of highly elongated InAs/InP nanostructures

M Zieliński - Physical Review B, 2019 - APS
A transition from a cylindrical quantum dot to a highly elongated quantum dash is
theoretically studied here with an atomistic approach combining empirical tight binding for …