Resistive memory devices at the thinnest limit: progress and challenges

XD Li, NK Chen, BQ Wang, M Niu, M Xu… - Advanced …, 2024 - Wiley Online Library
The Si‐based integrated circuits industry has been developing for more than half a century,
by focusing on the scaling‐down of transistor. However, the miniaturization of transistors will …

Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions

JH Kang, H Shin, KS Kim, MK Song, D Lee, Y Meng… - Nature materials, 2023 - nature.com
Abstract Three-dimensional (3D) hetero-integration technology is poised to revolutionize the
field of electronics by stacking functional layers vertically, thereby creating novel 3D circuity …

Research progress of artificial neural systems based on memristors

Z Tang, B Sun, G Zhou, Y Zhou, Z Cao, X Duan… - Materials Today …, 2023 - Elsevier
The artificial nervous system includes electronic devices designed to simulate the functions
of the biological nervous system, thereby endowing them with the ability to perceive …

Ultralow Off‐State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors

X Liu, C Zhang, E Li, C Gao, R Wang… - Advanced Functional …, 2024 - Wiley Online Library
Memristors based on 2D semiconductors hold great promise due to their atomic‐level
thickness and tunable optoelectronic properties. However, a significant challenge lies in …

Photoinduced Nonvolatile Resistive Switching Behavior in Oxygen-Doped MoS2 for a Neuromorphic Vision System

K Chang, X Zhao, X Yu, Z Gan, R Wang, A Dong… - Nano Letters, 2023 - ACS Publications
Controlling resistance by external fields provides fascinating opportunities for the
development of novel devices and circuits, such as temperature-field-induced …

Ag-doped non–imperfection-enabled uniform memristive neuromorphic device based on van der Waals indium phosphorus sulfide

Y Li, Y Xiong, B Zhai, L Yin, Y Yu, H Wang, J He - Science Advances, 2024 - science.org
Memristors are considered promising energy-efficient artificial intelligence hardware, which
can eliminate the von Neumann bottleneck by parallel in-memory computing. The common …

Modulating p-type doping of two dimensional material palladium diselenide

J Yang, Y Liu, EY Wang, J Pang, S Huang, T Gemming… - Nano Research, 2024 - Springer
The van der Waals heterostructures have evolved as novel materials for complementing the
Si-based semiconductor technologies. Group-10 noble metal dichalcogenides (eg, PtS2 …

The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices

B Spetzler, D Abdel, F Schwierz… - Advanced Electronic …, 2024 - Wiley Online Library
Two‐dimensional layered transition metal dichalcogenides (TMDCs) are promising
memristive materials for neuromorphic computing systems. Despite extensive experimental …

Two-Dimensional Materials based Memtransistors: Integration Strategies, Switching Mechanisms and Advanced Characterizations

W Deng, X Yan, L Wang, N Yu, W Luo, L Mai - Nano Energy, 2024 - Elsevier
Abstract Two-dimensional (2D) materials-based memtransistors offer a wide range of
programmable memory characteristics, high energy efficiency, rapid response, high …

Two-Dimensional Tunneling Memtransistor with Thin-Film Heterostructure for Low-Power Logic-in-Memory Complementary Metal-Oxide Semiconductor

T Zou, S Heo, G Byeon, S Yoo, M Kim, Y Reo, S Kim… - ACS …, 2024 - ACS Publications
With the demand for high-performance and miniaturized semiconductor devices
continuously rising, the development of innovative tunneling transistors via efficient stacking …