The device performance of AlGaN/InGaN/GaN Double Heterostructure Metal-Oxide-
Semiconductor High Electron Mobility Transistor (DH MOS-HEMT) upon using 10 nm thick …

AlGaN/GaN high electron mobility transistors (HEMTs) were grown on Si substrates by
MOCVD. In the HEMT structure, the 1 μm GaN buffer layer was partially doped with Mg in an …

A systematic GaN single heterojucntion HEMT (SH-HEMT) physical based numerical model
is established in this paper. This model includes field-dependent mobility, polarization effect …

ABSTRACT The Indian Electric Vehicle (EV) Industry is gradually gaining traction thanks to
government initiatives. However, a widespread switch from internal combustion engine (ICE) …

针对传统单结GaN 基高电子迁移率晶体管器件性能受电流崩塌效应和自加热效应限制的困境,
对新型A1GaN/GaN/InGaN/GaN 双异质结高电子迁移率晶体管的直流性质展开了系统研究 …

In this work, we report the microwave noise characterization of E-mode double-
heterojunction HEMT (DH-HEMT). The E-mode DH-HEMT shows reduced noise figure …

Highly-efficient switch-mode power amplifiers form key elements in future fully-digital base
stations for mobile communication. This novel digital base station concept reduces system …

摘要(中) 氮化鎵(GaN) 材料於近十年來應用於光電與電子元件的發展突飛猛進, 產品種類也不斷
推陳出新. 以電子元件為例, 氮化鋁鎵/氮化鎵(AlGaN/GaN) 高速電子遷移率電晶體由於氮化鎵 …

This is the report on the effect of annealing on enhancement-mode AlGaN/GaN/AlGaN
doubleheterostructures (DH) HEMTs by fluorine plasma treatment with different GaN …

High-performance enhancement-mode (E-mode) AlGaN/GaN MOSHEMT has been
achieved by CF 4 plasma treatment and bimodal-gate-oxide deposition scheme. ALD-Al 2 O …