Designer atomic layer etching

KJ Kanarik - US Patent 10,566,212, 2020 - Google Patents
Methods for evaluating synergy of modification and removal operations for a wide variety of
materials to determine process conditions for self-limiting etching by atomic layer etching are …

Atomic layer etch, reactive precursors and energetic sources for patterning applications

A Lavoie, P Agarwal, P Kumar - US Patent 10,832,909, 2020 - Google Patents
Methods and apparatuses for patterning carbon-containing material over a layer to be
etched are provided herein. Methods involve trimming carbon-containing material by atomic …

Atomic layer etching of tungsten and other metals

W Yang, S Tan, KJ Kanarik, J Marks… - US Patent …, 2018 - Google Patents
Provided herein are methods of atomic layer etching (ALE) of metals including tungsten (W)
and cobalt (Co). The methods disclosed herein provide precise etch control down to the …

Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)

KJ Kanarik, J Marks, H Singh, S Tan… - US Patent …, 2019 - Google Patents
Methods are provided for integrating atomic layer etch and atomic layer deposition by
performing both processes in the same chamber or reactor. Methods involve sequentially …

Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces

S Tan, W Yang, KJ Kanarik, T Lill, Y Pan - US Patent 10,727,073, 2020 - Google Patents
Methods and apparatuses for etching semiconductor material on substrates using atomic
layer etching by chemisorption, by deposition, or by both chemisorption and deposition …

Atomic layer etching in continuous plasma

Z Tan, Y Zhang, Y Wu, Q Xu, Q Fu… - US Patent …, 2018 - Google Patents
Methods and apparatus for etching substrates using self-limiting reactions based on removal
energy thresholds determined by evaluating the material to be etched and the chemistries …

Selective deposition with atomic layer etch reset

KS Reddy, MG Rainville, N Shankar… - US Patent …, 2020 - Google Patents
Methods are provided for conducting a deposition on a semiconductor substrate by
selectively depositing a material on the substrate. The substrate has a plurality of substrate …

Atomic layer deposition and etch in a single plasma chamber for critical dimension control

X Zhou, Y Kimura, D Zhang, C Xu… - US Patent …, 2020 - Google Patents
Methods and apparatuses for critical dimension (CD) control of substrate features using
integrated atomic layer deposition (ALD) and etch processes are described herein. Methods …

Cobalt etch back

J Yang, B Zhou, M Shen, T Lill, J Hoang - US Patent 10,784,086, 2020 - Google Patents
Methods of etching cobalt on substrates are provided. Some methods involve exposing the
substrate to a boron-containing halide gas and an additive, and exposing the substrate to an …

Designer atomic layer etching

KJ Kanarik - US Patent 11,239,094, 2022 - Google Patents
Methods for evaluating synergy of modification and removal operations for a wide variety of
materials to determine process conditions for self-limiting etching by atomic layer etching are …