A Lavoie, P Agarwal, P Kumar - US Patent 10,832,909, 2020 - Google Patents
Methods and apparatuses for patterning carbon-containing material over a layer to be etched are provided herein. Methods involve trimming carbon-containing material by atomic …
W Yang, S Tan, KJ Kanarik, J Marks… - US Patent …, 2018 - Google Patents
Provided herein are methods of atomic layer etching (ALE) of metals including tungsten (W) and cobalt (Co). The methods disclosed herein provide precise etch control down to the …
KJ Kanarik, J Marks, H Singh, S Tan… - US Patent …, 2019 - Google Patents
Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially …
S Tan, W Yang, KJ Kanarik, T Lill, Y Pan - US Patent 10,727,073, 2020 - Google Patents
Methods and apparatuses for etching semiconductor material on substrates using atomic layer etching by chemisorption, by deposition, or by both chemisorption and deposition …
Z Tan, Y Zhang, Y Wu, Q Xu, Q Fu… - US Patent …, 2018 - Google Patents
Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries …
KS Reddy, MG Rainville, N Shankar… - US Patent …, 2020 - Google Patents
Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate …
X Zhou, Y Kimura, D Zhang, C Xu… - US Patent …, 2020 - Google Patents
Methods and apparatuses for critical dimension (CD) control of substrate features using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods …
J Yang, B Zhou, M Shen, T Lill, J Hoang - US Patent 10,784,086, 2020 - Google Patents
Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an …
KJ Kanarik - US Patent 11,239,094, 2022 - Google Patents
Methods for evaluating synergy of modification and removal operations for a wide variety of materials to determine process conditions for self-limiting etching by atomic layer etching are …