▪ Abstract As a result of their fully quantized electronic states and high radiative efficiencies,
self-assembled quantum dots have enabled major advances in fundamental physics studies …

Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states
and high radiative efficiencies. This makes them highly suitable both for fundamental …

The low-temperature steady-state and time-resolved photoluminescence (PL) from self-
assembled InAs quantum dots (QDs) embedded in AlAs with various densities of growth …

Microphotoluminescence (PL) spectra of a single InAs/GaAs self-assembled quantum dot
(QD) are studied under the main excitation of electron-hole pairs in the wetting layer (WL) …

We study the time-resolved photoluminescence emission of InAs self-assembled quantum
dots QDs incorporated in a GaAs/AlGaAs quantum well. We show that the quantum well …

InAs/GaAs quantum dots have been subjected to a lateral external electric field in low-
temperature microphotoluminescence measurements. It is demonstrated that the dot PL …

A photoluminescence study of self-assembled In As∕ Ga As quantum dots under the
influence of magnetic fields perpendicular and parallel to the dot layer is presented. At low …

We report on magneto-photoluminescence studies of InAs/GaAs quantum dots (QDs) of
considerably different densities, from dense ensembles down to individual dots. It is found …

We present a detailed study of the low-temperature spectroscopy and recombination
dynamics of an In As∕ Al As quantum dot sample. In particular, our studies reveal the …

The chapter reviews ultrafast dynamics of carrier transfer into InAs/GaAs and InGaAs/GaAs
quantum dots of different doping, densities and interlevel energies. Results from theoretical …