Study of indium tin oxide-4, 4′-bis (4-dimethylaminostyryl) benzene interface: an X ray photoelectron spectroscopy investigation
TP Nguyen, J Ip - Applied surface science, 2002 - Elsevier
The electrode-organic material interfaces are expected to play a crucial role in the charge
injection mechanism in organic light emitting diodes (OLEDs), and hence have a strong …
injection mechanism in organic light emitting diodes (OLEDs), and hence have a strong …
XPS study of InP/InGaAs/InGaAsP microstructures irradiated with ArF laser in air and deionized water
N Liu, K Moumanis, S Blais… - Synthesis and Photonics …, 2012 - spiedigitallibrary.org
Excimer lasers, due to their compatibility with a large-scale industrial production, are
attractive tools for precise processing of photonic and microelectronic materials. In this …
attractive tools for precise processing of photonic and microelectronic materials. In this …
Pulsed laser deposition of InP thin films on sapphire (1 0 0 0) and GaAs (1 0 0)
MA Hafez, KA Elamrawi, HE Elsayed-Ali - Applied surface science, 2004 - Elsevier
Indium phosphide thin films were deposited on sapphire and GaAs (100) substrates by
pulsed laser deposition using a XeCl excimer laser in argon background gas and in high …
pulsed laser deposition using a XeCl excimer laser in argon background gas and in high …
Bandgap Engineering of Quantum Semiconductor Microstructures
JJ Dubowski - Handbook of Laser Micro-and Nano-Engineering, 2020 - Springer
The continuous progress in advancing thin films growth methods has enabled fabrication of
innovative devices based on semiconductor microstructures. The epitaxial growth …
innovative devices based on semiconductor microstructures. The epitaxial growth …
Impact of In Situ NH3 Plasma Treatments on the Interface between HfLaOx Thin Film and InP Substrate
TT Jia, XH Cheng, D Cao, DW Xu… - Advanced Materials …, 2013 - Trans Tech Publ
In situ NH3 plasma nitridation was utilized to passivate InP surface, HfLaO x film was grown
by plasma enhanced atom layer deposition method, and the HfLaO x film remain amorphous …
by plasma enhanced atom layer deposition method, and the HfLaO x film remain amorphous …
Room temperature photoluminescence studies of nitrided InP (100) surfaces
S Arabasz, B Adamowicz, M Petit, B Gruzza… - Materials Science and …, 2006 - Elsevier
The evolution of thin InN overlayer grown on InP (100) rich In substrate was investigated at
room temperature by photoluminescence method versus the duration of nitridation process …
room temperature by photoluminescence method versus the duration of nitridation process …