Photoluminescence, its temperature dependence, and photoluminescence excitation
spectra of InAs quantum dots embedded in asymmetric In x Ga 1− x As∕ Ga As quantum …

We investigate the electronic energy levels and carrier dynamics in InAs/In x Ga 1− x As dots-
in-a-well (DWELL) structure by comprehensive spectroscopic characterization over a …

Photoluminescence (PL) properties of self-organized quantum dots (QDs) in a vertically
aligned double-layer InAs/GaAs QD structure are studied as a function of temperature from …

We report the fabrication procedure and the characterization of an Al0. 3Ga0. 7As solar cell
containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The …

InAs (N) quantum dots (QDs) were grown on GaAs (001) by solid source molecular beam
epitaxy. Nitrogen was supplied by a radio-frequency plasma cell. The samples were …

The possibility of controlling the photoluminescence (PL) intensity and its temperature
dependence by means of in-growth and postgrowth technological procedures has been …

The electronic band structures and optical gains of InAs 1− x N x/GaAs pyramid quantum
dots (QDs) are calculated using the ten-band k⋅ p model and the valence force field …

Self-organized InAs quantum dots (QDs) are grown in the Stranski–Krastanov regime, by
molecular beam epitaxy, on (100) GaAs substrates. In order to grow high-quality QDs …

InAs/GaAs vertically stacked self‐assembled quantum dot (QD) structures with different
GaAs spacer layer thicknesses are grown by solid source molecular beam epitaxy (SSMBE) …

The carrier transfer and activation processes among lateral coupled InAs/AlAs quantum dots
(QDs) are investigated based on the analysis of excitation power and temperature …