The paper presents a precise and efficient model of Double-Side Cooled (DSC) SiC
MOSFET, which incorporates the dynamics of both electrical and thermal variables. It offers …

Silicon carbide (SiC) power devices have the potential to operate at high temperatures
beyond the capabilities of silicon power devices. At increased temperatures, the temperature …

Low conduction and switching loss silicon carbide power modules must be operated at
higher maximum junction temperatures utilizing their wide bandgap material properties. This …

The variability of the temperature-dependent on-state resistance, R dsON (T), of SiC power
MOSFETs can significantly affect the temperature distribution, and, hence, the lifetime of SiC …

This paper presents an analysis of power cycling (PC) capabilities of two industry-standard
packages with silicon carbide power MOSFET dies: the discrete TO-247 package and a …

The self-heating effect (SHE) of silicon-on-insulator (SOI) MOSFETs brings challenges to the
measurement and modeling of transient electrothermal characteristics. For the first time, this …

Wide band gap semiconductors are attractive in the electric vehicle industry because of their
higher operating temperatures, and lower switching losses than those of silicon …

In this work, the influences of special environments (hydrogen gas and high temperature,
high humidity environments) on the performance of three types of SiC MOSFETs are …

This paper shows a 3-D electro-thermal FEM-based modeling of SiC multichip power
modules including the volume heat generation of SiC power MOSFET dies. Based on a …

This paper presents a comprehensive analysis on the information contained within the
structure functions of SiC power MOSFET packages, focusing on the regions of die and die …