MS Vaccaro - International Journal of Engineering Science, 2022 - Elsevier
Nowadays, nanocomposite beams undergoing large displacements are effectively employed as basic structural components of small-scale electro-mechanical systems, such …
Y Gowthami, B Balaji, KS Rao - Journal of Electronic Materials, 2023 - Springer
In this paper, we propose a symmetrical low-κ source-side spacer multi-gate nanowire device design and analysis. High-κ spacer materials are currently researched extensively for …
K Rajasekhar, K GirijaSravani… - Microsystem Technologies, 2023 - Springer
RF signal routers are become prominent in the modern wireless communication transceivers. SPMT RF MEMS switches predominantly plays significant role in RF signal …
This paper presents the Electromagnetic modelling and simulation analysis of an RF MEMS Shunt switch. The S parameters are investigated with different analysis such as changing …
SS Sravani, B Balaji, KS Rao, AN Babu, M Aditya… - Silicon, 2022 - Springer
Abstract Tunnel Field Effect Transistor (TFET) has become one of the promising devices to be part of Integrated circuits as the technology advances to the nanoscale. A TFET has many …
M Das, A Bhushan - Engineering Research Express, 2021 - iopscience.iop.org
In this paper, we present static and dynamic analysis of an electrostatically actuated imperfect circular microplate under transverse pressure. In modelling of the microplate, we …
KG Sravani, KS Rao, K Guha - Microelectronics Journal, 2021 - Elsevier
In this paper, pull in voltage in closed form model is derived from the capacitance generated in RF MEMS switches during ON and OFF conditions. The proposed model contains the …
H Zhu, J Pan, S Tan, G Huang, M Song - Energy Reports, 2022 - Elsevier
This paper introduces the principle of RF MEMS switch and performs modeling analysis. By analyzing the low control voltage and microwave power of the switch, phenomena such as …
In this paper we proposed a new structure of GaAsP/6H-SiC/GaN Power semiconductor field effect transistor with undoped region under gate. The device is made of semiconductor …