Terahertz communications and sensing for 6G and beyond: A comprehensive review

W Jiang, Q Zhou, J He, MA Habibi… - … Surveys & Tutorials, 2024 - ieeexplore.ieee.org
Next-generation cellular technologies, commonly referred to as the sixth generation (6G),
are envisioned to support a higher system capacity, better performance, and network …

A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band

T Maiwald, T Li, GR Hotopan, K Kolb… - Proceedings of the …, 2023 - ieeexplore.ieee.org
The evolution of wireless communication points to increasing demands on throughput for
data-intensive applications in modern society. Integrated millimeter-wave systems with …

Terahertz communications: Challenges in the next decade

HJ Song, N Lee - IEEE Transactions on Terahertz Science and …, 2021 - ieeexplore.ieee.org
Thanks to the abrupt advances in semiconductor technologies, particularly in terms of the
operating frequency, the last decade has seen various efforts and trials in attempts to …

Terahertz band: The last piece of RF spectrum puzzle for communication systems

H Elayan, O Amin, B Shihada… - IEEE Open Journal …, 2019 - ieeexplore.ieee.org
Ultra-high bandwidth, negligible latency and seamless communication are envisioned as
milestones that will revolutionize the way by which societies create, distribute and consume …

A D-band manifold triplexer with high isolation utilizing novel waveguide dual-mode filters

Y Feng, B Zhang, Y Liu, Z Niu, Y Fan… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This letter presents our design of a wideband manifold-coupled triplexer with high isolation
in D-band. The basic structure of channel filters is the novel TM 120 and TE 101 dual-mode …

Millimeter-wave and terahertz transceivers in SiGe BiCMOS technologies

D Kissinger, G Kahmen… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary
metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the …

High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5–19-dBm Psat and 14.2–12.1% Peak PAE in 45-nm CMOS RFSOI

S Li, GM Rebeiz - IEEE Journal of Solid-State Circuits, 2022 - ieeexplore.ieee.org
This article presents fully integrated power amplifiers (PAs) with eight-way low-loss power
combining for-band applications in the GlobalFoundries CMOS 45RFSOI process. The eight …

A low-power SiGe BiCMOS 190-GHz transceiver chipset with demonstrated data rates up to 50 Gbit/s using on-chip antennas

D Fritsche, P Stärke, C Carta… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
This paper presents a 190-GHz direct conversion transceiver (TRX) chipset with on-chip
antennas implemented in a 130-nm SiGe BiCMOS technology for short-distance high-data …

A D-band radio-on-glass module for spectrally-efficient and low-cost wireless backhaul

A Singh, M Sayginer, MJ Holyoak… - 2020 IEEE Radio …, 2020 - ieeexplore.ieee.org
D-Band Radio-on-Glass (RoG) modules combining two highly integrated SiGe BiCMOS
transceivers (TRX) with a record low-loss glass interposer technology are presented. The …

An eight-element 136–147 GHz wafer-scale phased-array transmitter with 32 dBm peak EIRP and> 16 Gbps 16QAM and 64QAM operation

S Li, Z Zhang, GM Rebeiz - IEEE Journal of Solid-State Circuits, 2022 - ieeexplore.ieee.org
This article presents a 140-GHz eight-element wafer-scale phased-array transmitter based
on intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control in the …