This article comprehensively reviews the growth of III–V antimony-based semiconductor
materials using metal-organic chemical vapor deposition (MOCVD). It does this by first …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

The dependence of electronic band structure, optical phonon frequencies, acoustic
velocities, and mechanical properties of InP 1-x Sb x alloys on temperature and pressure …

There are three main reasons for the study of antimonides, they are the optical [mainly
infrared], electrical [mainly Insb; the Gasb/Inas heterojunction] and structural [mainly …

InPBi was predicted to be the most robust infrared optoelectronic material but also the most
difficult to synthesize within In-VBi (V= P, As and Sb) 25 years ago. We report the first …

Magnetic-loss type electromagnetic wave (EMW) absorbing materials have been always
focused on EMW absorbing field due to their excellent magnetic loss properties. However …

We present a theoretical investigation of the energy band-gaps and vibrational properties of
InP 1− x Sb x semiconducting alloys in the zinc-blende structure. For this purpose a …

The energy gap of dilute nitride GaAsSbN has been studied. We found that the energy gap
reduction induced by nitrogen incorporation is nearly independent of the Sb composition of …

In this work, we have investigated the structural, electronic and thermodynamic properties of
GaP _ 1-x 1-x Sb _ xx and AlP _ 1-x 1-x Sb _ xx ternary alloys for a number of ordered …

InP 1-x Sb x was grown by metalorganic chemical vapor deposition under a variety of
conditions. The V/III vapor phase ratio was varied from 327 to 12 over a temperature range …