Phase-sensitive analysis of a two-color infrared photodetector using photoreflectance spectroscopy
B Zeinalvand Farzin, DK Lee, TI Kang, JS Kim… - Journal of Applied …, 2023 - pubs.aip.org
The phase diagrams of photoreflectance spectra were investigated for an InGaAs two-color
infrared photodetector. The diagrams for a high excitation intensity revealed that the …
infrared photodetector. The diagrams for a high excitation intensity revealed that the …
[HTML][HTML] The dazzling/damage mechanism of InGaAs detectors by near-infrared continuous laser
Y Wang, Y Wang, Y Xu, Y Zhang, Y Liu, J Shao - Results in Physics, 2024 - Elsevier
To investigate the dazzling/damage mechanism of InGaAs detectors by continuous laser,
InGaAs detectors irradiated by continuous laser were analyzed theoretically and verified …
InGaAs detectors irradiated by continuous laser were analyzed theoretically and verified …
A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality
M Demir, S Elagöz - Cumhuriyet Science Journal, 2024 - csj.cumhuriyet.edu.tr
This study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP
substrate, a critical area in the development of high-performance III-V semiconductor …
substrate, a critical area in the development of high-performance III-V semiconductor …