Luminescent colloidal semiconductor nanocrystals containing copper: synthesis, photophysics, and applications
KE Knowles, KH Hartstein, TB Kilburn… - Chemical …, 2016 - ACS Publications
Copper-doped semiconductors are classic phosphor materials that have been used in a
variety of applications for many decades. Colloidal copper-doped semiconductor …
variety of applications for many decades. Colloidal copper-doped semiconductor …
Zinc oxide as a defect-dominated material in thin films for photovoltaic applications–experimental determination of defect levels, quantification of composition, and …
In the present work, thin ZnO layers were synthesized by the sol–gel method with
subsequent spin-coating on Si (100). We show that the detailed analysis of lab-recorded …
subsequent spin-coating on Si (100). We show that the detailed analysis of lab-recorded …
[图书][B] Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides
H Morkoç - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Group III nitrides
Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive of AlN,
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …
Properties of the intermediately bound and-excitons in ZnO: Cu
P Dahan, V Fleurov, P Thurian, R Heitz… - Journal of Physics …, 1998 - iopscience.iop.org
A microscopical model is proposed, describing the origin and properties of three closely
spaced zero-phonon lines observed in the green Cu band in ZnO: Cu crystals labelled and …
spaced zero-phonon lines observed in the green Cu band in ZnO: Cu crystals labelled and …
Bound excitons in GaN
B Monemar - Journal of Physics: Condensed Matter, 2001 - iopscience.iop.org
The electronic structure of bound excitons in GaN is discussed, with reference to available
optical data. Emphasis is given to the neutral-donor and neutral-acceptor spectra, which are …
optical data. Emphasis is given to the neutral-donor and neutral-acceptor spectra, which are …
Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si
Deep luminescence centers in Si associated with transition metals have been studied for
decades, both as markers for these deleterious contaminants, as well as for the possibility of …
decades, both as markers for these deleterious contaminants, as well as for the possibility of …
Magneto-optics of Ni-bound shallow states in ZnS and CdS
R Heitz, A Hoffmann, I Broser - Physical Review B, 1993 - APS
Transition metals in semiconductors give rise to shallow states which cannot be described
on the basis of their 3d wave functions. In this paper a comparative study of shallow states …
on the basis of their 3d wave functions. In this paper a comparative study of shallow states …
Fine structure of effective mass acceptors in gallium nitride
R Stȩpniewski, A Wysmołek, M Potemski, K Pakuła… - Physical review …, 2003 - APS
Magnetoluminescence of the exciton bound to a neutral acceptor was measured to
investigate the electronic structure of a shallow acceptor center in GaN. The application of …
investigate the electronic structure of a shallow acceptor center in GaN. The application of …
Optical characterization of III-nitrides
Recent developments in material properties of GaN and related heterostructure
combinations are reviewed, with emphasis on optical data. We discuss recent polarized …
combinations are reviewed, with emphasis on optical data. We discuss recent polarized …