Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs: N δ-doped superlattice structure

MD Haque, N Kamata, AZMT Islam, Z Honda, S Yagi… - Optical Materials, 2019 - Elsevier
Nonradiative recombination (NRR) centers in GaAs: N δ-doped superlattice (SL) structure
grown by metal organic vapor phase epitaxy (MOVPE) are studied by two-wavelength …

Spectral Change of E Band Emission in a GaAs:N δ-Doped Superlattice Due to Below-Gap Excitation and Its Discrimination from Thermal Activation

MD Haque, N Kamata, AZMT Islam, S Yagi… - Journal of Electronic …, 2020 - Springer
In this study, we examined the E− band luminescence of a GaAs: N δ-doped superlattice
(SL) grown by metal organic vapor phase epitaxy with 0.15% nitrogen (N) using two …

Spectroscopy of Nonradiative Recombination Levels by Two‐Wavelength Excited Photoluminescence

N Kamata - physica status solidi (b), 2021 - Wiley Online Library
The intensity of photoluminescence (PL) changes when an additional below‐gap excitation
(BGE) light modifies the electronic occupation of one of the crystalline defects acting as …

Study of nonradiative recombination centers in GaAs: N δ-doped superlattices structures revealed by below-gap excitation light

MD Haque, N Kamata, AZMT Islam… - 2019 International …, 2019 - ieeexplore.ieee.org
Nonradiative recombination (NRR) centers in GaAs: N δ-doped superlattices (SLs) grown by
molecular beam epitaxy (MBE) has been investigated by two-wavelength excited …

禁制帯内励起光を用いた非発光再結合準位の分光学的検出・評価手法《 マイレビュー》

鎌田憲彦, カマタノリヒコ - CACS FORUM: 埼玉大学研究機構科学 …, 2020 - sucra.repo.nii.ac.jp
Crystalline defects in semiconductors form localized energy states inside the forbidden
energy gap and act as nonradiative recombination (NRR) levels. They accelerate …