Infrared photodetector based on solution-processed colloidal quantum dots (QDs), which
possess the special properties of wide-size-tunable bandgap, high quantum confinement …

The application of strain into GeSn alloys can effectively modulate the band structures, thus
creating novel electronic and photonic devices. Raman spectroscopy is a powerful tool for …

Intersubband optical transitions, refractive index changes, and absorption coefficients are
numerically driven for direct bandgap strained GeSn/Ge quantum dots. The linear, third …

In this study, we examined the self-organized formation of Ge 1− x Sn x quantum dots (QDs)
on insulators based on a simple sputtering process and considered their luminescence …

The preparation of GeSn quantum dots (QDs) facilitates the solution of Si-based light source
for communication. The GeSn QDs with a uniform size of 5 nm embedded in amorphous …

In this paper, we study the resistance versus temperature characteristics of Ge 1-x Sn x thin
film alloys to assess the possibility of using them for temperature sensing layers in …

GeSn alloys have recently emerged as complementary metal–oxide–semiconductor
(CMOS)-compatible materials for optoelectronic applications. Although various photonic …

Germanium–tin nanoparticles are promising materials for near-and mid-infrared photonics
thanks to their tunable optical properties and compatibility with silicon technology. This work …

The paper represents the investigations of dimensional and structural properties of
nanoparticles produced by pulsed-periodic spark discharge by simultaneous electrical …

The electronic structures of Ge1− xSnx nanowires at the direct Γ‐valley and indirect L‐valley
is calculated using k· p effective‐mass theory, and the results demonstrate that Ge1− xSnx …