Characterization of electrically active dopant profiles with the spreading resistance probe
T Clarysse, D Vanhaeren, I Hoflijk… - Materials Science and …, 2004 - Elsevier
Since its original conception in the 1960s, the spreading resistance probe (SRP) has
evolved into a reliable and quantitative tool for sub-micrometer, electrically active dopant …
evolved into a reliable and quantitative tool for sub-micrometer, electrically active dopant …
Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy …
RC Germanicus, F Lallemand, D Chateigner… - Nano …, 2021 - iopscience.iop.org
Progressing miniaturization and the development of semiconductor integrated devices ask
for advanced characterizations of the different device components with ever-increasing …
for advanced characterizations of the different device components with ever-increasing …
[PDF][PDF] Experimental study and optimization of scanning capacitance microscopy for two-dimensional carrier profiling of submicron semiconductor devices
N Duhayon - 2006 - lirias.kuleuven.be
Experimental study and optimization of scanning capacitance microscopy for two-dimensional
carrier profiling of submicron semic Page 1 Departement Natuurkunde en Sterrenkunde …
carrier profiling of submicron semic Page 1 Departement Natuurkunde en Sterrenkunde …
High resolution two-dimensional carrier profiling on sub-100nm silicon nano-devices using scanning spreading resistance microscopy
P Eyben, H Fukutome, D Alvarez… - Proceedings of the …, 2004 - ieeexplore.ieee.org
This work presents the recent progress in scanning spreading resistance microscopy
(SSRM) capabilities highlighting enhanced spatial resolution (< 5 nm) and excellent …
(SSRM) capabilities highlighting enhanced spatial resolution (< 5 nm) and excellent …