Characterizations on the doping of single-crystal silicon carbide
Due to its intriguingly electrical, thermal and optical characteristics, single-crystal silicon
carbide (SiC), one of the most significant wide-bandgap semiconductors, has been receiving …
carbide (SiC), one of the most significant wide-bandgap semiconductors, has been receiving …
Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes
S Han, H Yu, C He, S Zhao, C Ning, L Jiang… - Optics & Laser …, 2022 - Elsevier
Silicon carbide has many advantages and a wide range of applications. The fabrication of a
thin silicon carbide wafer using diamond wire cutting has become problematic because it …
thin silicon carbide wafer using diamond wire cutting has become problematic because it …
Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties
S Sato, T Narahara, Y Abe, Y Hijikata… - Journal of Applied …, 2019 - pubs.aip.org
NCV Si− centers in SiC [nitrogen-vacancy (NV) centers], which produce near-infrared (NIR)
photoluminescence (PL) at room temperature, is expected to have applications as quantum …
photoluminescence (PL) at room temperature, is expected to have applications as quantum …
4H-SiC wafer slicing by using femtosecond laser double-pulses
E Kim, Y Shimotsuma, M Sakakura… - Optical Materials …, 2017 - opg.optica.org
Silicon carbide (SiC) is promising as a key material for power electronics devices owing to
its wide bandgap property. Meanwhile, by the convention wire-saw technique, it is difficult to …
its wide bandgap property. Meanwhile, by the convention wire-saw technique, it is difficult to …
Vibrational–Electrical Properties Relationship in Donor-Doped TiO2 by Raman Spectroscopy
Transparent conducting TiO2, obtained by Nb or Ta doping of the anatase structure, is
gaining increasing attention for the development of transparent electrodes. Usually …
gaining increasing attention for the development of transparent electrodes. Usually …
Optical spectroscopy study of damage induced in 4H-SiC by swift heavy ion irradiation
S Sorieul, X Kerbiriou, JM Costantini… - Journal of Physics …, 2012 - iopscience.iop.org
Single crystals of 4H-SiC were irradiated with swift heavy ions (332 MeV Ti, 106 MeV Pb and
2.7 GeV U) in the electronic energy loss regime. The resulting damage was investigated with …
2.7 GeV U) in the electronic energy loss regime. The resulting damage was investigated with …
Controlled generation of photoemissive defects in 4H-SiC using swift heavy ion irradiation
Defects in SiC have shown tremendous capabilities for quantum technology-based
applications, making it necessary to achieve on-demand, high-concentration, and uniform …
applications, making it necessary to achieve on-demand, high-concentration, and uniform …
Intense ionizing irradiation-induced atomic movement toward recrystallization in 4H-SiC
An ultrafast thermal spike within a time interval of a few pico-seconds generated by intense
ionizing energy deposited using 100 MeV Ag ions is utilized to study the atomistic details of …
ionizing energy deposited using 100 MeV Ag ions is utilized to study the atomistic details of …
Relation between work function and structural properties of triangular defects in 4H-SiC epitaxial layer: Kelvin probe force microscopic and spectroscopic analyses
To understand the relationship between the work function and structural properties of
sufficiently expanded triangular defects (size:∼ 250 μm) in the 4H-SiC epitaxial layer, Kelvin …
sufficiently expanded triangular defects (size:∼ 250 μm) in the 4H-SiC epitaxial layer, Kelvin …
Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers
In this work an extensive characterization over XeCl multishot laser irradiation was
performed at different energy densities and with different thicknesses of graphitic coating …
performed at different energy densities and with different thicknesses of graphitic coating …