This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

The control and rational design of redox‐based memristive devices, which are highly
attractive candidates for next‐generation nonvolatile memory and logic applications, is …

In recent years, several materials and metal-insulator-metal devices are being intensively
studied as prospective non-volatile memories due to their resistive switching effect. In this …

In this chapter, we introduce the reversible, nonvolatile change in electrical resistance of
transition metal oxide interfaces known as resistive switching. This effect occurs driven by …

In this chapter, redox‐based resistive memories (ReRAMs) are highlighted. Three
subclasses, namely, electro‐chemical metallization (ECM) cells, valency change …

As conventional memory concepts are approaching their physical scaling limits, novel
memory device concepts for highly scalable, ultrafast, energy efficient, nonvolatile memory …

In this paper, we propose a new architecture of non-volatile Flip-Flop based on ReRAM
unipolar resistive memory element (RNVFF). This architecture is proposed in the context of …

In this chapter, the roles of interfaces and interfacial reactions on the resistive switching
behavior of oxide-based redox-type memristive (ReRAM) devices are discussed. Typical …

Size reduction of transistors has been the main reason for a successful development of
computer systems over the last decades. Since the downscaling of transistors is assumed to …

En los últimos años, la búsqueda de sustitutos para la actual tecnología CMOS en la que se
basan la mayoría de memorias de estado sólido, como las flash, se ha incrementado. Ello …