Dispersion, wave propagation and efficiency analysis of nanowire solar cells

J Kupec, B Witzigmann - Optics express, 2009 - opg.optica.org
We analyze the electromagnetic properties of InP/InAs nanowire solar cells for different
geometries. We address both eigenvalue calculations to determine the wave propagation as …

Band structure, -factor, and spin relaxation in -type InAsP alloys

SK Thapa, RRHH Mudiyanselage, T Paleologu, S Choi… - Physical Review B, 2023 - APS
We present experimental and theoretical studies of the magneto-optical properties of n-type
InAs x P 1− x films in ultrahigh magnetic fields at room temperature. We compare Landau …

Above-bandgap ordinary optical properties of GaSe single crystal

SG Choi, DH Levi, C Martinez-Tomas… - Journal of Applied …, 2009 - pubs.aip.org
We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal.
Reference-quality pseudodielectric function⟨ ε (E)⟩=⟨ ε 1 (E)⟩+ i⟨ ε 2 (E)⟩ and …

Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers

TR Merritt, MA Meeker, BA Magill… - Journal of Applied …, 2014 - pubs.aip.org
The excitonic radiative transitions of InAs x P 1− x (x= 0.13 and x= 0.40) alloy epitaxial layers
were studied through magnetic field and temperature dependent photoluminescence and …

Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry

ZL Bushell, RM Joseph, L Nattermann… - Journal of Applied …, 2018 - pubs.aip.org
Critical point transition energies and optical functions of the novel GaAs-based dilute
bismide alloys GaAsBi, GaNAsBi, and GaPAsBi were determined using spectroscopic …

Dielectric functions and interband transitions of InxAl1− xP alloys

TJ Kim, SY Hwang, JS Byun, DE Aspnes, EH Lee… - Current Applied …, 2014 - Elsevier
We report pseudodielectric functions< ε> from 1.5 to 6.0 eV of In x Al 1− x P ternary alloy
films. Data were obtained by spectroscopic ellipsometry on 1.2 μm thick films grown on (001) …

InAs critical-point energies at 22 K from spectroscopic ellipsometry

TJ Kim, JJ Yoon, SY Hwang, YW Jung… - Applied Physics …, 2010 - pubs.aip.org
We report dielectric function data from 0.74 to 6.54 eV for InAs at 22 K, obtained by
spectroscopic ellipsometry. Critical-point (CP) structures are blueshifted and significantly …

Spectroscopic ellipsometry study of GaAs1− xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy

N Ben Sedrine, I Moussa, H Fitouri, A Rebey… - Applied Physics …, 2009 - pubs.aip.org
The optical properties in terms of complex dielectric function of GaAs 1− x Bi x alloys (0%≤
x≤ 3.7%)⁠, grown by atmospheric pressure metal-organic vapor-phase epitaxy, are …

Dynamics of photoexcited carriers and spins in InAsP ternary alloys

MA Meeker, BA Magill, TR Merritt, M Bhowmick… - Applied Physics …, 2013 - pubs.aip.org
The recent rapid progress in the field of spintronics involves extensive measurements of
carrier and spin relaxation dynamics in III-V semiconductors. In addition, as the switching …

Time-dependent density functional theory calculations for the excitation spectra of III-V ternary alloys

Z Ning, CT Liang, YC Chang - Physical Review B, 2017 - APS
We adopted the time-dependent density functional theory (TDDFT) within the linear
augmented Slater-type orbitals basis and the cluster averaging method to compute the …