Polarization‐and Gate‐Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure

H Wang, Y Li, P Gao, J Wang, X Meng, Y Hu… - Advanced …, 2024 - Wiley Online Library
Polarimetric photodetector can acquire higher resolution and more surface information of
imaging targets in complex environments due to the identification of light polarization. To …

Vertical 1T'‐WTe2/WS2 Schottky‐Barrier Phototransistor with Polarity‐Switching Behavior

J Ma, J Wang, Q Chen, S Chen, M Yang… - Advanced Electronic …, 2024 - Wiley Online Library
In recent years, 2D reconfigurable phototransistors (RPTs) have been applied in broadband
convolutional processing, retinomorphic hardware devices, and non‐volatile memorizers …

Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga 2 O 3

C Leblanc, DH Mudiyanselage, S Song, H Zhang… - Nanoscale, 2023 - pubs.rsc.org
Wide bandgap semiconductors such as gallium oxide (Ga2O3) have attracted much
attention for their use in next-generation high-power electronics. Although single-crystal …

How to identify and characterize strongly correlated topological semimetals

DM Kirschbaum, M Lužnik, G Le Roy… - Journal of Physics …, 2023 - iopscience.iop.org
How strong correlations and topology interplay is a topic of great current interest. In this
perspective paper, we focus on correlation-driven gapless phases. We take the time …

Van der Waals Schottky Junction Photodetector with Ultrahigh Rectifying Ratio and Switchable Photocurrent Generation

JY Wu, HY Jiang, ZY Wen, CR Wang… - ACS Applied Materials & …, 2024 - ACS Publications
Metal–semiconductor junctions play an important role in the development of electronic and
optoelectronic devices. A Schottky junction photodetector based on two-dimensional (2D) …

[HTML][HTML] Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration

Z Chen, X Deng, S Zhang, Y Wang, Y Wu… - … Journal of Extreme …, 2023 - iopscience.iop.org
As Moore's law deteriorates, the research and development of new materials system are
crucial for transitioning into the post Moore era. Traditional semiconductor materials, such as …

Photocurrent generation in solids via linearly polarized laser

A Bharti, G Dixit - Physical Review B, 2024 - APS
To add to the rapidly progressing field of ultrafast photocurrent, we propose a universal
method to generate photocurrent in normal and topological materials using a pair of …

Metal-semiconductor-metal solar-blind ultraviolet photodetector based on Al0.55Ga0.45N/Al0.4Ga0.6N/Al0.65Ga0.35N heterostructures

S Dai, Y Gu, J Guo, F Xie, Y Liu, X Yang, X Zhang… - Optics …, 2023 - opg.optica.org
We have designed a metal–semiconductor–metal (MSM) solar-blind ultraviolet (UV)
photodetector (PD) by utilizing Al_0. 55Ga_0. 45N/Al_0. 4Ga_0. 6N/Al_0. 65Ga_0. 35N …